发明申请
- 专利标题: Semiconductor device and manufacturing method thereof
- 专利标题(中): 半导体装置及其制造方法
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申请号: US10910805申请日: 2004-08-04
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公开(公告)号: US20050048740A1公开(公告)日: 2005-03-03
- 发明人: Takashi Noma , Katsuhiko Kitagawa , Hisao Otsuka , Akira Suzuki , Yoshinori Seki , Yukihiro Takao , Keiichi Yamaguchi , Motoaki Wakui , Masanori Iida
- 申请人: Takashi Noma , Katsuhiko Kitagawa , Hisao Otsuka , Akira Suzuki , Yoshinori Seki , Yukihiro Takao , Keiichi Yamaguchi , Motoaki Wakui , Masanori Iida
- 申请人地址: JP Moriguchi-city
- 专利权人: Sanyo Electric Co., Ltd.
- 当前专利权人: Sanyo Electric Co., Ltd.
- 当前专利权人地址: JP Moriguchi-city
- 优先权: JP2003-288150 20030806; JP2004-022989 20040130
- 主分类号: H01L23/12
- IPC分类号: H01L23/12 ; H01L21/301 ; H01L23/31 ; H01L23/485
摘要:
A manufacturing method of a semiconductor device formed in a chip size package is improved to enhance a yield and reliability. A window to expose first wirings is formed only in a region of a semiconductor substrate where the first wirings exist. As a result, area of the semiconductor substrate bonded to a supporting body through an insulation film and a resin is increased to prevent cracks in the supporting body and separation of the semiconductor substrate from the supporting body. A slit is formed along a dicing line after forming the window, the slit is covered with a protection film and then the semiconductor substrate is diced into individual semiconductor dice. Thus, separation on a cut surface or at an edge of the semiconductor dice, which otherwise would be caused by contact of the blade in the dicing can be prevented.
公开/授权文献
- US07312107B2 Semiconductor device and manufacturing method thereof 公开/授权日:2007-12-25
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