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公开(公告)号:US07919875B2
公开(公告)日:2011-04-05
申请号:US11956160
申请日:2007-12-13
申请人: Takashi Noma , Katsuhiko Kitagawa , Hisao Otsuka , Akira Suzuki , Yoshinori Seki , Yukihiro Takao , Keiichi Yamaguchi , Motoaki Wakui , Masanori Iida
发明人: Takashi Noma , Katsuhiko Kitagawa , Hisao Otsuka , Akira Suzuki , Yoshinori Seki , Yukihiro Takao , Keiichi Yamaguchi , Motoaki Wakui , Masanori Iida
CPC分类号: H01L24/13 , H01L21/6835 , H01L21/6836 , H01L21/78 , H01L23/3114 , H01L24/11 , H01L24/12 , H01L2221/68327 , H01L2221/68372 , H01L2224/02313 , H01L2224/0401 , H01L2224/0558 , H01L2224/05644 , H01L2224/131 , H01L2224/13144 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/00014 , H01L2224/13099
摘要: A manufacturing method of a semiconductor device formed in a chip size package is improved to enhance a yield and reliability. A window to expose first wirings is formed only in a region of a semiconductor substrate where the first wirings exist. As a result, area of the semiconductor substrate bonded to a supporting body through an insulation film and a resin is increased to prevent cracks in the supporting body and separation of the semiconductor substrate from the supporting body. A slit is formed along a dicing line after forming the window, the slit is covered with a protection film and then the semiconductor substrate is diced into individual semiconductor dice. Thus, separation on a cut surface or at an edge of the semiconductor dice, which otherwise would be caused by contact of the blade in the dicing can be prevented.
摘要翻译: 改进了以芯片尺寸封装形成的半导体器件的制造方法,以提高产量和可靠性。 仅在存在第一布线的半导体基板的区域中形成露出第一布线的窗口。 结果,增加了通过绝缘膜和树脂粘合到支撑体的半导体衬底的面积,以防止支撑体中的裂纹和半导体衬底与支撑体的分离。 在形成窗口之后沿着切割线形成狭缝,用保护膜覆盖狭缝,然后将半导体基板切割成单独的半导体管芯。 因此,可以防止在切割时由刀片接触而导致的半导体管芯的切割面或边缘处的分离。
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公开(公告)号:US20080093708A1
公开(公告)日:2008-04-24
申请号:US11956160
申请日:2007-12-13
申请人: Takashi Noma , Katsuhiko Kitagawa , Hisao Otsuka , Akira Suzuki , Yoshinori Seki , Yukihiro Takao , Keiichi Yamaguchi , Motoaki Wakui , Masanori Iida
发明人: Takashi Noma , Katsuhiko Kitagawa , Hisao Otsuka , Akira Suzuki , Yoshinori Seki , Yukihiro Takao , Keiichi Yamaguchi , Motoaki Wakui , Masanori Iida
IPC分类号: H01L23/48
CPC分类号: H01L24/13 , H01L21/6835 , H01L21/6836 , H01L21/78 , H01L23/3114 , H01L24/11 , H01L24/12 , H01L2221/68327 , H01L2221/68372 , H01L2224/02313 , H01L2224/0401 , H01L2224/0558 , H01L2224/05644 , H01L2224/131 , H01L2224/13144 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/00014 , H01L2224/13099
摘要: A manufacturing method of a semiconductor device formed in a chip size package is improved to enhance a yield and reliability. A window to expose first wirings is formed only in a region of a semiconductor substrate where the first wirings exist. As a result, area of the semiconductor substrate bonded to a supporting body through an insulation film and a resin is increased to prevent cracks in the supporting body and separation of the semiconductor substrate from the supporting body. A slit is formed along a dicing line after forming the window, the slit is covered with a protection film and then the semiconductor substrate is diced into individual semiconductor dice. Thus, separation on a cut surface or at an edge of the semiconductor dice, which otherwise would be caused by contact of the blade in the dicing can be prevented.
摘要翻译: 改进了以芯片尺寸封装形成的半导体器件的制造方法,以提高产量和可靠性。 仅在存在第一布线的半导体基板的区域中形成露出第一布线的窗口。 结果,增加了通过绝缘膜和树脂粘合到支撑体的半导体衬底的面积,以防止支撑体中的裂纹和半导体衬底与支撑体的分离。 在形成窗口之后沿着切割线形成狭缝,用保护膜覆盖狭缝,然后将半导体基板切割成单独的半导体管芯。 因此,可以防止在切割时由刀片接触而导致的半导体管芯的切割面或边缘处的分离。
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公开(公告)号:US07312107B2
公开(公告)日:2007-12-25
申请号:US10910805
申请日:2004-08-04
申请人: Takashi Noma , Katsuhiko Kitagawa , Hisao Otsuka , Akira Suzuki , Yoshinori Seki , Yukihiro Takao , Keiichi Yamaguchi , Motoaki Wakui , Masanori Iida
发明人: Takashi Noma , Katsuhiko Kitagawa , Hisao Otsuka , Akira Suzuki , Yoshinori Seki , Yukihiro Takao , Keiichi Yamaguchi , Motoaki Wakui , Masanori Iida
IPC分类号: H01L21/44
CPC分类号: H01L24/13 , H01L21/6835 , H01L21/6836 , H01L21/78 , H01L23/3114 , H01L24/11 , H01L24/12 , H01L2221/68327 , H01L2221/68372 , H01L2224/02313 , H01L2224/0401 , H01L2224/0558 , H01L2224/05644 , H01L2224/131 , H01L2224/13144 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/00014 , H01L2224/13099
摘要: A manufacturing method of a semiconductor device formed in a chip size package is improved to enhance a yield and reliability. A window to expose first wirings is formed only in a region of a semiconductor substrate where the first wirings exist. As a result, area of the semiconductor substrate bonded to a supporting body through an insulation film and a resin is increased to prevent cracks in the supporting body and separation of the semiconductor substrate from the supporting body. A slit is formed along a dicing line after forming the window, the slit is covered with a protection film and then the semiconductor substrate is diced into individual semiconductor dice. Thus, separation on a cut surface or at an edge of the semiconductor dice, which otherwise would be caused by contact of the blade in the dicing can be prevented.
摘要翻译: 改进了以芯片尺寸封装形成的半导体器件的制造方法,以提高产量和可靠性。 仅在存在第一布线的半导体基板的区域中形成露出第一布线的窗口。 结果,增加了通过绝缘膜和树脂粘合到支撑体的半导体衬底的面积,以防止支撑体中的裂纹和半导体衬底与支撑体的分离。 在形成窗口之后沿着切割线形成狭缝,用保护膜覆盖狭缝,然后将半导体基板切割成单独的半导体管芯。 因此,可以防止在切割时由刀片接触而导致的半导体管芯的切割面或边缘处的分离。
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公开(公告)号:US20050048740A1
公开(公告)日:2005-03-03
申请号:US10910805
申请日:2004-08-04
申请人: Takashi Noma , Katsuhiko Kitagawa , Hisao Otsuka , Akira Suzuki , Yoshinori Seki , Yukihiro Takao , Keiichi Yamaguchi , Motoaki Wakui , Masanori Iida
发明人: Takashi Noma , Katsuhiko Kitagawa , Hisao Otsuka , Akira Suzuki , Yoshinori Seki , Yukihiro Takao , Keiichi Yamaguchi , Motoaki Wakui , Masanori Iida
IPC分类号: H01L23/12 , H01L21/301 , H01L23/31 , H01L23/485
CPC分类号: H01L24/13 , H01L21/6835 , H01L21/6836 , H01L21/78 , H01L23/3114 , H01L24/11 , H01L24/12 , H01L2221/68327 , H01L2221/68372 , H01L2224/02313 , H01L2224/0401 , H01L2224/0558 , H01L2224/05644 , H01L2224/131 , H01L2224/13144 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/00014 , H01L2224/13099
摘要: A manufacturing method of a semiconductor device formed in a chip size package is improved to enhance a yield and reliability. A window to expose first wirings is formed only in a region of a semiconductor substrate where the first wirings exist. As a result, area of the semiconductor substrate bonded to a supporting body through an insulation film and a resin is increased to prevent cracks in the supporting body and separation of the semiconductor substrate from the supporting body. A slit is formed along a dicing line after forming the window, the slit is covered with a protection film and then the semiconductor substrate is diced into individual semiconductor dice. Thus, separation on a cut surface or at an edge of the semiconductor dice, which otherwise would be caused by contact of the blade in the dicing can be prevented.
摘要翻译: 改进了以芯片尺寸封装形成的半导体器件的制造方法,以提高产量和可靠性。 仅在存在第一布线的半导体基板的区域中形成露出第一布线的窗口。 结果,增加了通过绝缘膜和树脂粘合到支撑体的半导体衬底的面积,以防止支撑体中的裂纹和半导体衬底与支撑体的分离。 在形成窗口之后沿着切割线形成狭缝,用保护膜覆盖狭缝,然后将半导体基板切割成单独的半导体管芯。 因此,可以防止在切割时由刀片接触而导致的半导体管芯的切割面或边缘处的分离。
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公开(公告)号:US09034729B2
公开(公告)日:2015-05-19
申请号:US12438869
申请日:2007-08-22
申请人: Hiroshi Yamada , Katsuhiko Kitagawa , Kazuo Okada , Yuichi Morita , Hiroyuki Shinogi , Shinzo Ishibe , Yoshinori Seki , Takashi Noma
发明人: Hiroshi Yamada , Katsuhiko Kitagawa , Kazuo Okada , Yuichi Morita , Hiroyuki Shinogi , Shinzo Ishibe , Yoshinori Seki , Takashi Noma
IPC分类号: H01L21/30 , H01L27/146 , B81C1/00
CPC分类号: H01L27/14618 , B81C1/00269 , B81C2203/0118 , H01L27/14625 , H01L27/14683 , H01L27/14685 , H01L2224/05001 , H01L2224/05022 , H01L2224/05124 , H01L2224/05147 , H01L2224/05548 , H01L2224/05644 , H01L2224/05655 , H01L2224/05666 , H01L2224/13 , H01L2224/13025 , H01L2924/00014
摘要: An object of the invention is to provide a smaller semiconductor device of which the manufacturing process is simplified and the manufacturing cost is reduced and a method of manufacturing the same. Furthermore, an object of the invention is to provide a semiconductor device having a cavity. A first supporting body 5 having a penetration hole 6 penetrating it from the front surface to the back surface is attached to a front surface of a semiconductor substrate 2 with an adhesive layer 4 being interposed therebetween. A device element 1 and wiring layers 3 are formed on the front surface of the semiconductor substrate 2. A second supporting body 7 is attached to the first supporting body 5 with an adhesive layer 8 being interposed therebetween so as to cover the penetration hole 6. The device element 1 is sealed in a cavity 9 surrounded by the semiconductor substrate 2, the first supporting body 5 and the second supporting body 7.
摘要翻译: 本发明的目的是提供一种较小的半导体器件,其制造工艺简化并且制造成本降低,并且制造该半导体器件的方法。 此外,本发明的目的是提供一种具有空腔的半导体器件。 具有穿透孔6的从前表面到后表面穿透的第一支撑体5被粘附在半导体衬底2的前表面上,其间插入有粘合剂层4。 器件元件1和布线层3形成在半导体衬底2的前表面上。第二支撑体7被安装在第一支撑体5上,其中夹有粘合剂层8以覆盖穿透孔6。 器件元件1被密封在由半导体衬底2,第一支撑体5和第二支撑体7包围的空腔9中。
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公开(公告)号:US20090206349A1
公开(公告)日:2009-08-20
申请号:US12438869
申请日:2007-08-22
申请人: Hiroshi Yamada , Katsuhiko Kitagawa , Kazuo Okada , Yuichi Morita , Hiroyuki Shinogi , Shinzo Ishibe , Yoshinori Seki , Takashi Noma
发明人: Hiroshi Yamada , Katsuhiko Kitagawa , Kazuo Okada , Yuichi Morita , Hiroyuki Shinogi , Shinzo Ishibe , Yoshinori Seki , Takashi Noma
CPC分类号: H01L27/14618 , B81C1/00269 , B81C2203/0118 , H01L27/14625 , H01L27/14683 , H01L27/14685 , H01L2224/05001 , H01L2224/05022 , H01L2224/05124 , H01L2224/05147 , H01L2224/05548 , H01L2224/05644 , H01L2224/05655 , H01L2224/05666 , H01L2224/13 , H01L2224/13025 , H01L2924/00014
摘要: An object of the invention is to provide a smaller semiconductor device of which the manufacturing process is simplified and the manufacturing cost is reduced and a method of manufacturing the same. Furthermore, an object of the invention is to provide a semiconductor device having a cavity. A first supporting body 5 having a penetration hole 6 penetrating it from the front surface to the back surface is attached to a front surface of a semiconductor substrate 2 with an adhesive layer 4 being interposed therebetween. A device element 1 and wiring layers 3 are formed on the front surface of the semiconductor substrate 2. A second supporting body 7 is attached to the first supporting body 5 with an adhesive layer 8 being interposed therebetween so as to cover the penetration hole 6. The device element 1 is sealed in a cavity 9 surrounded by the semiconductor substrate 2, the first supporting body 5 and the second supporting body 7.
摘要翻译: 本发明的目的是提供一种较小的半导体器件,其制造工艺简化并且制造成本降低,并且制造该半导体器件的方法。 此外,本发明的目的是提供一种具有空腔的半导体器件。 具有穿透孔6的从前表面到后表面穿透的第一支撑体5被粘附在半导体衬底2的前表面上,其间插入有粘合剂层4。 器件元件1和布线层3形成在半导体衬底2的前表面上。第二支撑体7被安装在第一支撑体5上,其中夹有粘合剂层8以覆盖穿透孔6。 器件元件1被密封在由半导体衬底2,第一支撑体5和第二支撑体7包围的空腔9中。
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公开(公告)号:US07271466B2
公开(公告)日:2007-09-18
申请号:US11206146
申请日:2005-08-18
申请人: Takashi Noma , Hiroyuki Shinogi , Nobuyuki Takai , Katsuhiko Kitagawa , Ryoji Tokushige , Takayasu Otagaki , Tatsuya Ando , Mitsuru Okigawa
发明人: Takashi Noma , Hiroyuki Shinogi , Nobuyuki Takai , Katsuhiko Kitagawa , Ryoji Tokushige , Takayasu Otagaki , Tatsuya Ando , Mitsuru Okigawa
IPC分类号: H01L29/40
CPC分类号: H01L24/10 , H01L23/3114 , H01L24/13 , H01L2224/05548 , H01L2224/05556 , H01L2224/05573 , H01L2224/13 , H01L2224/13099 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01021 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/00
摘要: Cost is reduced and reliability is improved with a BGA (Ball Grid Array) type semiconductor device which has ball-shaped conductive terminals. A first wiring is formed on an insulation film which is formed on a surface of a semiconductor die. A glass substrate is bonded over the surface of the semiconductor die, and a side surface and a back surface of the semiconductor die are covered with an insulation film. A second wiring is connected to a side surface or a back surface of the first wiring and extending over the back surface of the semiconductor die. A conductive terminal such as a bump is formed on the second wiring.
摘要翻译: 具有球形导电端子的BGA(球栅阵列)型半导体器件降低了成本并提高了可靠性。 第一布线形成在形成在半导体管芯的表面上的绝缘膜上。 在半导体管芯的表面上接合玻璃基板,半导体管芯的侧表面和背面被绝缘膜覆盖。 第二布线连接到第一布线的侧表面或后表面并在半导体管芯的后表面上延伸。 导电端子如凸块形成在第二布线上。
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公开(公告)号:US08766408B2
公开(公告)日:2014-07-01
申请号:US11714906
申请日:2007-03-07
申请人: Takashi Noma , Shigeki Otsuka , Yuichi Morita , Kazuo Okada , Hiroshi Yamada , Katsuhiko Kitagawa , Noboru Okubo , Shinzo Ishibe , Hiroyuki Shinogi
发明人: Takashi Noma , Shigeki Otsuka , Yuichi Morita , Kazuo Okada , Hiroshi Yamada , Katsuhiko Kitagawa , Noboru Okubo , Shinzo Ishibe , Hiroyuki Shinogi
IPC分类号: H01L21/00
CPC分类号: H01L23/3128 , H01L21/6835 , H01L21/6836 , H01L23/49816 , H01L24/10 , H01L24/13 , H01L25/105 , H01L2221/68327 , H01L2221/68354 , H01L2224/13 , H01L2224/13099 , H01L2225/1035 , H01L2225/1058 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/09701 , H01L2924/12042 , H01L2924/3511 , H01L2924/00
摘要: A packaged semiconductor device is manufactured by a simplified manufacturing process, and is reduced in cost, in thickness and in size. A device component and a pad electrode connected with the device component are formed on a semiconductor substrate. A supporter is bonded to a top surface of the semiconductor substrate through an adhesive layer. Then, there is formed a protection layer that has an opening at a location corresponding to the pad electrode and covers a side surface and a back surface of the semiconductor substrate. A conductive terminal is formed on the pad electrode at the location corresponding to the opening formed in the protection layer. No wiring layer or conductive terminal is formed on the back surface of the semiconductor substrate. A conductive terminal is formed on a periphery of the supporter outside of and next to the side surface of the semiconductor substrate.
摘要翻译: 封装的半导体器件通过简化的制造工艺制造,并且在成本,厚度和尺寸方面都降低了。 在半导体衬底上形成与器件部件连接的器件部件和焊盘电极。 支撑体通过粘合剂层结合到半导体衬底的顶表面。 然后,形成保护层,该保护层在与焊盘电极对应的位置处具有开口,并且覆盖半导体衬底的侧表面和后表面。 在与保护层中形成的开口相对应的位置处,在焊盘电极上形成导电端子。 在半导体基板的背面没有形成布线层或导电端子。 导电端子形成在半导体衬底的侧表面之外和旁边的支撑体的周边上。
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公开(公告)号:US07986021B2
公开(公告)日:2011-07-26
申请号:US11639410
申请日:2006-12-15
申请人: Kazuo Okada , Katsuhiko Kitagawa , Takashi Noma , Shigeki Otsuka , Hiroshi Yamada , Shinzo Ishibe , Yuichi Morita , Noboru Okubo , Hiroyuki Shinogi , Mitsuru Okigawa
发明人: Kazuo Okada , Katsuhiko Kitagawa , Takashi Noma , Shigeki Otsuka , Hiroshi Yamada , Shinzo Ishibe , Yuichi Morita , Noboru Okubo , Hiroyuki Shinogi , Mitsuru Okigawa
IPC分类号: H01L31/0232
CPC分类号: H01L27/14618 , H01L23/481 , H01L27/14625 , H01L31/0203 , H01L31/02327 , H01L2224/02371 , H01L2224/02372 , H01L2224/0401 , H01L2224/05 , H01L2224/05548 , H01L2224/13022 , H01L2224/13024 , H01L2224/131 , H01L2924/014
摘要: The invention provides a semiconductor device that solves a problem of reflection of a pattern of a wiring formed on a back surface of a semiconductor substrate on an output image. A reflection layer is formed between a light receiving element and a wiring layer, that reflects an infrared ray toward a light receiving element the without transmitting it to the wiring layer, the infrared ray entering from a light transparent substrate toward the wiring layer through a semiconductor substrate. The reflection layer is formed at least in a region under the light receiving element uniformly or only under the light receiving element. Alternatively, an anti-reflection layer having a function of absorbing the entering infrared ray to prevent transmission thereof may be formed instead of the reflection layer.
摘要翻译: 本发明提供一种半导体器件,其解决了在输出图像上形成在半导体衬底的背面上的布线的图案的反射的问题。 在光接收元件和布线层之间形成反射层,其将红外线反射到光接收元件而不将其传输到布线层,红外线通过半导体从光透明基板进入布线层 基质。 反射层至少在光接收元件下方的区域中均匀地或仅在光接收元件下形成。 或者,可以形成具有吸收入射红外线以防止透射的功能的抗反射层,而不是反射层。
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公开(公告)号:US07633133B2
公开(公告)日:2009-12-15
申请号:US11639411
申请日:2006-12-15
申请人: Takashi Noma , Kazuo Okada , Shinzo Ishibe , Katsuhiko Kitagawa , Yuichi Morita , Shigeki Otsuka , Hiroshi Yamada , Noboru Okubo , Hiroyuki Shinogi , Mitsuru Okigawa
发明人: Takashi Noma , Kazuo Okada , Shinzo Ishibe , Katsuhiko Kitagawa , Yuichi Morita , Shigeki Otsuka , Hiroshi Yamada , Noboru Okubo , Hiroyuki Shinogi , Mitsuru Okigawa
IPC分类号: H01L31/0203 , H01L31/0216 , H01L31/0224
CPC分类号: H01L27/14618 , H01L27/14636 , H01L31/0203 , H01L2224/05001 , H01L2224/05008 , H01L2224/05024 , H01L2224/05124 , H01L2224/05147 , H01L2224/05548 , H01L2224/05624 , H01L2224/05647 , H01L2224/10 , H01L2924/00014
摘要: This invention provides a semiconductor device that solves a problem that a pattern of a wiring formed on a back surface of a semiconductor substrate is reflected on an output image. A light receiving element (e.g. a CCD, an infrared ray sensor, a CMOS sensor, or an illumination sensor) is formed on a front surface of a semiconductor substrate, and a plurality of ball-shaped conductive terminals is disposed on a back surface of the semiconductor substrate. Each of the conductive terminals is electrically connected to a pad electrode on the front surface of the semiconductor substrate through a wiring layer. The wiring layer and the conductive terminal are formed on the back surface of the semiconductor substrate except in a region overlapping the light receiving element in a vertical direction, and are not disposed in a region overlapping the light receiving element.
摘要翻译: 本发明提供一种半导体器件,其解决了形成在半导体衬底的背面上的布线的图案在输出图像上反射的问题。 在半导体衬底的前表面上形成有光接收元件(例如CCD,红外线传感器,CMOS传感器或照明传感器),并且多个球形导电端子设置在 半导体衬底。 每个导电端子通过布线层电连接到半导体衬底的前表面上的焊盘电极。 布线层和导电端子形成在除了在垂直方向上与光接收元件重叠的区域之外的半导体基板的背面上,并且不布置在与光接收元件重叠的区域中。
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