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公开(公告)号：US07919875B2
公开(公告)日：2011-04-05
申请号：US11956160
申请日：2007-12-13
申请人： Takashi Noma , Katsuhiko Kitagawa , Hisao Otsuka , Akira Suzuki , Yoshinori Seki , Yukihiro Takao , Keiichi Yamaguchi , Motoaki Wakui , Masanori Iida
发明人： Takashi Noma , Katsuhiko Kitagawa , Hisao Otsuka , Akira Suzuki , Yoshinori Seki , Yukihiro Takao , Keiichi Yamaguchi , Motoaki Wakui , Masanori Iida
CPC分类号： H01L24/13 , H01L21/6835 , H01L21/6836 , H01L21/78 , H01L23/3114 , H01L24/11 , H01L24/12 , H01L2221/68327 , H01L2221/68372 , H01L2224/02313 , H01L2224/0401 , H01L2224/0558 , H01L2224/05644 , H01L2224/131 , H01L2224/13144 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/00014 , H01L2224/13099
摘要： A manufacturing method of a semiconductor device formed in a chip size package is improved to enhance a yield and reliability. A window to expose first wirings is formed only in a region of a semiconductor substrate where the first wirings exist. As a result, area of the semiconductor substrate bonded to a supporting body through an insulation film and a resin is increased to prevent cracks in the supporting body and separation of the semiconductor substrate from the supporting body. A slit is formed along a dicing line after forming the window, the slit is covered with a protection film and then the semiconductor substrate is diced into individual semiconductor dice. Thus, separation on a cut surface or at an edge of the semiconductor dice, which otherwise would be caused by contact of the blade in the dicing can be prevented.
摘要翻译： 改进了以芯片尺寸封装形成的半导体器件的制造方法，以提高产量和可靠性。 仅在存在第一布线的半导体基板的区域中形成露出第一布线的窗口。 结果，增加了通过绝缘膜和树脂粘合到支撑体的半导体衬底的面积，以防止支撑体中的裂纹和半导体衬底与支撑体的分离。 在形成窗口之后沿着切割线形成狭缝，用保护膜覆盖狭缝，然后将半导体基板切割成单独的半导体管芯。 因此，可以防止在切割时由刀片接触而导致的半导体管芯的切割面或边缘处的分离。
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公开(公告)号：US20080093708A1
公开(公告)日：2008-04-24
申请号：US11956160
申请日：2007-12-13
申请人： Takashi Noma , Katsuhiko Kitagawa , Hisao Otsuka , Akira Suzuki , Yoshinori Seki , Yukihiro Takao , Keiichi Yamaguchi , Motoaki Wakui , Masanori Iida
发明人： Takashi Noma , Katsuhiko Kitagawa , Hisao Otsuka , Akira Suzuki , Yoshinori Seki , Yukihiro Takao , Keiichi Yamaguchi , Motoaki Wakui , Masanori Iida
IPC分类号： H01L23/48
CPC分类号： H01L24/13 , H01L21/6835 , H01L21/6836 , H01L21/78 , H01L23/3114 , H01L24/11 , H01L24/12 , H01L2221/68327 , H01L2221/68372 , H01L2224/02313 , H01L2224/0401 , H01L2224/0558 , H01L2224/05644 , H01L2224/131 , H01L2224/13144 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/00014 , H01L2224/13099
摘要： A manufacturing method of a semiconductor device formed in a chip size package is improved to enhance a yield and reliability. A window to expose first wirings is formed only in a region of a semiconductor substrate where the first wirings exist. As a result, area of the semiconductor substrate bonded to a supporting body through an insulation film and a resin is increased to prevent cracks in the supporting body and separation of the semiconductor substrate from the supporting body. A slit is formed along a dicing line after forming the window, the slit is covered with a protection film and then the semiconductor substrate is diced into individual semiconductor dice. Thus, separation on a cut surface or at an edge of the semiconductor dice, which otherwise would be caused by contact of the blade in the dicing can be prevented.
摘要翻译： 改进了以芯片尺寸封装形成的半导体器件的制造方法，以提高产量和可靠性。 仅在存在第一布线的半导体基板的区域中形成露出第一布线的窗口。 结果，增加了通过绝缘膜和树脂粘合到支撑体的半导体衬底的面积，以防止支撑体中的裂纹和半导体衬底与支撑体的分离。 在形成窗口之后沿着切割线形成狭缝，用保护膜覆盖狭缝，然后将半导体基板切割成单独的半导体管芯。 因此，可以防止在切割时由刀片接触而导致的半导体管芯的切割面或边缘处的分离。
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公开(公告)号：US07312107B2
公开(公告)日：2007-12-25
申请号：US10910805
申请日：2004-08-04
申请人： Takashi Noma , Katsuhiko Kitagawa , Hisao Otsuka , Akira Suzuki , Yoshinori Seki , Yukihiro Takao , Keiichi Yamaguchi , Motoaki Wakui , Masanori Iida
发明人： Takashi Noma , Katsuhiko Kitagawa , Hisao Otsuka , Akira Suzuki , Yoshinori Seki , Yukihiro Takao , Keiichi Yamaguchi , Motoaki Wakui , Masanori Iida
IPC分类号： H01L21/44
CPC分类号： H01L24/13 , H01L21/6835 , H01L21/6836 , H01L21/78 , H01L23/3114 , H01L24/11 , H01L24/12 , H01L2221/68327 , H01L2221/68372 , H01L2224/02313 , H01L2224/0401 , H01L2224/0558 , H01L2224/05644 , H01L2224/131 , H01L2224/13144 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/00014 , H01L2224/13099
摘要： A manufacturing method of a semiconductor device formed in a chip size package is improved to enhance a yield and reliability. A window to expose first wirings is formed only in a region of a semiconductor substrate where the first wirings exist. As a result, area of the semiconductor substrate bonded to a supporting body through an insulation film and a resin is increased to prevent cracks in the supporting body and separation of the semiconductor substrate from the supporting body. A slit is formed along a dicing line after forming the window, the slit is covered with a protection film and then the semiconductor substrate is diced into individual semiconductor dice. Thus, separation on a cut surface or at an edge of the semiconductor dice, which otherwise would be caused by contact of the blade in the dicing can be prevented.
摘要翻译： 改进了以芯片尺寸封装形成的半导体器件的制造方法，以提高产量和可靠性。 仅在存在第一布线的半导体基板的区域中形成露出第一布线的窗口。 结果，增加了通过绝缘膜和树脂粘合到支撑体的半导体衬底的面积，以防止支撑体中的裂纹和半导体衬底与支撑体的分离。 在形成窗口之后沿着切割线形成狭缝，用保护膜覆盖狭缝，然后将半导体基板切割成单独的半导体管芯。 因此，可以防止在切割时由刀片接触而导致的半导体管芯的切割面或边缘处的分离。
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公开(公告)号：US20050048740A1
公开(公告)日：2005-03-03
申请号：US10910805
申请日：2004-08-04
申请人： Takashi Noma , Katsuhiko Kitagawa , Hisao Otsuka , Akira Suzuki , Yoshinori Seki , Yukihiro Takao , Keiichi Yamaguchi , Motoaki Wakui , Masanori Iida
发明人： Takashi Noma , Katsuhiko Kitagawa , Hisao Otsuka , Akira Suzuki , Yoshinori Seki , Yukihiro Takao , Keiichi Yamaguchi , Motoaki Wakui , Masanori Iida
IPC分类号： H01L23/12 , H01L21/301 , H01L23/31 , H01L23/485
CPC分类号： H01L24/13 , H01L21/6835 , H01L21/6836 , H01L21/78 , H01L23/3114 , H01L24/11 , H01L24/12 , H01L2221/68327 , H01L2221/68372 , H01L2224/02313 , H01L2224/0401 , H01L2224/0558 , H01L2224/05644 , H01L2224/131 , H01L2224/13144 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/00014 , H01L2224/13099
摘要： A manufacturing method of a semiconductor device formed in a chip size package is improved to enhance a yield and reliability. A window to expose first wirings is formed only in a region of a semiconductor substrate where the first wirings exist. As a result, area of the semiconductor substrate bonded to a supporting body through an insulation film and a resin is increased to prevent cracks in the supporting body and separation of the semiconductor substrate from the supporting body. A slit is formed along a dicing line after forming the window, the slit is covered with a protection film and then the semiconductor substrate is diced into individual semiconductor dice. Thus, separation on a cut surface or at an edge of the semiconductor dice, which otherwise would be caused by contact of the blade in the dicing can be prevented.
摘要翻译： 改进了以芯片尺寸封装形成的半导体器件的制造方法，以提高产量和可靠性。 仅在存在第一布线的半导体基板的区域中形成露出第一布线的窗口。 结果，增加了通过绝缘膜和树脂粘合到支撑体的半导体衬底的面积，以防止支撑体中的裂纹和半导体衬底与支撑体的分离。 在形成窗口之后沿着切割线形成狭缝，用保护膜覆盖狭缝，然后将半导体基板切割成单独的半导体管芯。 因此，可以防止在切割时由刀片接触而导致的半导体管芯的切割面或边缘处的分离。
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公开(公告)号：US07101735B2
公开(公告)日：2006-09-05
申请号：US10696581
申请日：2003-10-30
申请人： Takashi Noma , Hiroyuki Shinogi , Akira Suzuki , Yoshinori Seki , Koichi Kuhara , Yukihiro Takao , Hiroshi Yamada
发明人： Takashi Noma , Hiroyuki Shinogi , Akira Suzuki , Yoshinori Seki , Koichi Kuhara , Yukihiro Takao , Hiroshi Yamada
IPC分类号： H01L21/44
CPC分类号： H01L21/6835 , H01L21/76898 , H01L23/3114 , H01L23/3185 , H01L23/481 , H01L24/10 , H01L2221/6834 , H01L2221/68377 , H01L2224/05001 , H01L2224/05008 , H01L2224/05548 , H01L2224/05569 , H01L2224/16 , H01L2924/01019 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/1305 , H01L2924/00 , H01L2224/05644 , H01L2924/00014 , H01L2224/05655 , H01L2224/05124 , H01L2224/05147
摘要： A first glass substrate is bonded through a resin to a top surface of a semiconductor wafer on which a first wiring is formed. A second glass substrate is bonded to a back surface of the semiconductor wafer through a resin. A V-shaped groove is formed by notching from a surface of the second glass substrate through a part of the first glass substrate. A second wiring connected with the first wiring and extending to the surface of the second glass substrate is formed. A protection film composed of an organic resin and a photoresist layer to provide the protection film with an opening are formed on the second wiring by spray coating. A conductive terminal is formed by screen printing using the protection film as a solder mask. A cushioning material may be formed on the second glass substrate by spray coating.
摘要翻译： 将第一玻璃基板通过树脂粘合到其上形成有第一布线的半导体晶片的顶表面。 通过树脂将第二玻璃基板结合到半导体晶片的背面。 通过第一玻璃基板的一部分从第二玻璃基板的表面开槽而形成V形槽。 形成与第一布线连接并延伸到第二玻璃基板的表面的第二布线。 通过喷涂在第二布线上形成由有机树脂和光致抗蚀剂层组成的保护膜以提供具有开口的保护膜。 通过使用保护膜作为焊接掩模的丝网印刷形成导电端子。 可以通过喷涂在第二玻璃基板上形成缓冲材料。
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公开(公告)号：US20070026639A1
公开(公告)日：2007-02-01
申请号：US11488890
申请日：2006-07-19
申请人： Takashi Noma , Hiroyuki Shinogi , Akira Suzuki , Yoshinori Seki , Koichi Kuhara , Yukihiro Takao , Hiroshi Yamada
发明人： Takashi Noma , Hiroyuki Shinogi , Akira Suzuki , Yoshinori Seki , Koichi Kuhara , Yukihiro Takao , Hiroshi Yamada
IPC分类号： H01L21/44
CPC分类号： H01L21/6835 , H01L21/76898 , H01L23/3114 , H01L23/3185 , H01L23/481 , H01L24/10 , H01L2221/6834 , H01L2221/68377 , H01L2224/05001 , H01L2224/05008 , H01L2224/05548 , H01L2224/05569 , H01L2224/16 , H01L2924/01019 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/1305 , H01L2924/00 , H01L2224/05644 , H01L2924/00014 , H01L2224/05655 , H01L2224/05124 , H01L2224/05147
摘要： A glass substrate is bonded through a resin to the top surface of a semiconductor wafer on which a first wiring is formed. A V-shaped groove is formed by notching from the back surface of the wafer. A second wiring connected with the first wiring and extending over the back surface of the wafer is formed. A protection film composed of an organic resin or a photoresist layer to provide protection with an opening is formed on the second wiring by spray coating. A conductive terminal is formed by screen printing using the protection film as a solder mask. A cushioning material may be formed on the back surface of the wafer by spray coating.
摘要翻译： 玻璃基板通过树脂粘合到其上形成有第一布线的半导体晶片的顶表面。 通过从晶片的背面开槽而形成V形槽。 形成与第一布线连接并在晶片的背面延伸的第二布线。 通过喷涂在第二布线上形成由有机树脂或光致抗蚀剂层组成的保护膜以提供开口的保护。 通过使用保护膜作为焊接掩模的丝网印刷形成导电端子。 可以通过喷涂在晶片的背面上形成缓冲材料。
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公开(公告)号：US07662670B2
公开(公告)日：2010-02-16
申请号：US11488890
申请日：2006-07-19
申请人： Takashi Noma , Hiroyuki Shinogi , Akira Suzuki , Yoshinori Seki , Koichi Kuhara , Yukihiro Takao , Hiroshi Yamada
发明人： Takashi Noma , Hiroyuki Shinogi , Akira Suzuki , Yoshinori Seki , Koichi Kuhara , Yukihiro Takao , Hiroshi Yamada
IPC分类号： H01L21/44
CPC分类号： H01L21/6835 , H01L21/76898 , H01L23/3114 , H01L23/3185 , H01L23/481 , H01L24/10 , H01L2221/6834 , H01L2221/68377 , H01L2224/05001 , H01L2224/05008 , H01L2224/05548 , H01L2224/05569 , H01L2224/16 , H01L2924/01019 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/1305 , H01L2924/00 , H01L2224/05644 , H01L2924/00014 , H01L2224/05655 , H01L2224/05124 , H01L2224/05147
摘要： A glass substrate is bonded through a resin to the top surface of a semiconductor wafer on which a first wiring is formed. A V-shaped groove is formed by notching from the back surface of the wafer. A second wiring connected with the first wiring and extending over the back surface of the wafer is formed. A protection film composed of an organic resin or a photoresist layer to provide protection with an opening is formed on the second wiring by spray coating. A conductive terminal is formed by screen printing using the protection film as a solder mask. A cushioning material may be formed on the back surface of the wafer by spray coating.
摘要翻译： 玻璃基板通过树脂粘合到其上形成有第一布线的半导体晶片的顶表面。 通过从晶片的背面开槽而形成V形槽。 形成与第一布线连接并在晶片的背面延伸的第二布线。 通过喷涂在第二布线上形成由有机树脂或光致抗蚀剂层组成的保护膜以提供开口的保护。 通过使用保护膜作为焊接掩模的丝网印刷形成导电端子。 可以通过喷涂在晶片的背面上形成缓冲材料。
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公开(公告)号：US07981807B2
公开(公告)日：2011-07-19
申请号：US12051502
申请日：2008-03-19
申请人： Akira Suzuki , Takashi Noma , Hiroyuki Shinogi , Yukihiro Takao , Shinzo Ishibe , Shigeki Otsuka , Keiichi Yamaguchi
发明人： Akira Suzuki , Takashi Noma , Hiroyuki Shinogi , Yukihiro Takao , Shinzo Ishibe , Shigeki Otsuka , Keiichi Yamaguchi
IPC分类号： H01L21/302
CPC分类号： H01L21/78 , H01L23/3114 , H01L23/482 , H01L23/49827 , H01L2224/05001 , H01L2224/05023 , H01L2224/05568 , H01L2224/16 , H01L2224/274 , H01L2924/00014 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2224/05599 , H01L2224/05099
摘要： Cost is reduced and reliability is improved with a CSP type semiconductor device. A glass substrate which works as a supporting plate is bonded through an adhesive to a first surface of a semiconductor wafer on which first wirings are formed. Thickness of the semiconductor wafer is reduced by back-grinding the semiconductor wafer on a second surface of the semiconductor wafer which is opposite to the first surface of the semiconductor wafer. The semiconductor wafer is wet-etched to remove bumps and dips on the second surface of the semiconductor wafer caused during the back-grinding. Then the second surface of the semiconductor wafer is etched to form a tapered groove. The semiconductor wafer is wet-etched to reduce bumps and dips caused by the etching and round a corner of the groove. The wet-etching improves coverage of insulation film, wiring and protection film and enhances yield and reliability of the semiconductor device.
摘要翻译： CSP型半导体器件降低成本并提高可靠性。 作为支撑板的玻璃基板通过粘合剂粘合到其上形成有第一布线的半导体晶片的第一表面。 半导体晶片的厚度通过在与半导体晶片的第一表面相对的半导体晶片的第二表面上的背面研磨半导体晶片来减少。 湿式蚀刻半导体晶片以去除在后研磨期间引起的半导体晶片的第二表面上的凸起和凹陷。 然后蚀刻半导体晶片的第二表面以形成锥形槽。 湿式蚀刻半导体晶片以减少由蚀刻引起的凸起和凹陷，并且绕着凹槽的一角。 湿蚀刻提高了绝缘膜，布线和保护膜的覆盖率，并提高了半导体器件的产量和可靠性。
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公开(公告)号：US20080171421A1
公开(公告)日：2008-07-17
申请号：US12051502
申请日：2008-03-19
申请人： Akira SUZUKI , Takashi Noma , Hiroyuki Shinogi , Yukihiro Takao , Shinzo Ishibe , Shigeki Otsuka , Keiichi Yamaguchi
发明人： Akira SUZUKI , Takashi Noma , Hiroyuki Shinogi , Yukihiro Takao , Shinzo Ishibe , Shigeki Otsuka , Keiichi Yamaguchi
IPC分类号： H01L21/304
CPC分类号： H01L21/78 , H01L23/3114 , H01L23/482 , H01L23/49827 , H01L2224/05001 , H01L2224/05023 , H01L2224/05568 , H01L2224/16 , H01L2224/274 , H01L2924/00014 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2224/05599 , H01L2224/05099
摘要： Cost is reduced and reliability is improved with a CSP type semiconductor device. A glass substrate which works as a supporting plate is bonded through an adhesive to a first surface of a semiconductor wafer on which first wirings are formed. Thickness of the semiconductor wafer is reduced by back-grinding the semiconductor wafer on a second surface of the semiconductor wafer which is opposite to the first surface of the semiconductor wafer. The semiconductor wafer is wet-etched to remove bumps and dips on the second surface of the semiconductor wafer caused during the back-grinding. Then the second surface of the semiconductor wafer is etched to form a tapered groove. The semiconductor wafer is wet-etched to reduce bumps and dips caused by the etching and round a corner of the groove. The wet-etching improves coverage of insulation film, wiring and protection film and enhances yield and reliability of the semiconductor device.
摘要翻译： CSP型半导体器件降低成本并提高可靠性。 作为支撑板的玻璃基板通过粘合剂粘合到其上形成有第一布线的半导体晶片的第一表面。 半导体晶片的厚度通过在与半导体晶片的第一表面相对的半导体晶片的第二表面上的背面研磨半导体晶片来减少。 湿式蚀刻半导体晶片以去除在后研磨期间引起的半导体晶片的第二表面上的凸起和凹陷。 然后蚀刻半导体晶片的第二表面以形成锥形槽。 湿式蚀刻半导体晶片以减少由蚀刻引起的凸起和凹陷，并且绕着凹槽的一角。 湿蚀刻提高了绝缘膜，布线和保护膜的覆盖率，并提高了半导体器件的产量和可靠性。
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公开(公告)号：US07371693B2
公开(公告)日：2008-05-13
申请号：US10784888
申请日：2004-02-24
申请人： Akira Suzuki , Takashi Noma , Hiroyuki Shinogi , Yukihiro Takao , Shinzo Ishibe , Shigeki Otsuka , Keiichi Yamaguchi
发明人： Akira Suzuki , Takashi Noma , Hiroyuki Shinogi , Yukihiro Takao , Shinzo Ishibe , Shigeki Otsuka , Keiichi Yamaguchi
IPC分类号： H01L21/461
CPC分类号： H01L21/78 , H01L23/3114 , H01L23/482 , H01L23/49827 , H01L2224/05001 , H01L2224/05023 , H01L2224/05568 , H01L2224/16 , H01L2224/274 , H01L2924/00014 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2224/05599 , H01L2224/05099
摘要： Cost is reduced and reliability is improved with a CSP type semiconductor device. A glass substrate which works as a supporting plate is bonded through an adhesive to a first surface of a semiconductor wafer on which first wirings are formed. Thickness of the semiconductor wafer is reduced by back-grinding the semiconductor wafer on a second surface of the semiconductor wafer which is opposite to the first surface of the semiconductor wafer. The semiconductor wafer is wet-etched to remove bumps and dips on the second surface of the semiconductor wafer caused during the back-grinding. Then the second surface of the semiconductor wafer is etched to form a tapered groove. The semiconductor wafer is wet-etched to reduce bumps and dips caused by the etching and round a corner of the groove. The wet-etching improves coverage of insulation film, wiring and protection film and enhances yield and reliability of the semiconductor device.
摘要翻译： CSP型半导体器件降低成本并提高可靠性。 作为支撑板的玻璃基板通过粘合剂粘合到其上形成有第一布线的半导体晶片的第一表面。 半导体晶片的厚度通过在与半导体晶片的第一表面相对的半导体晶片的第二表面上的背面研磨半导体晶片来减少。 湿式蚀刻半导体晶片以去除在后研磨期间引起的半导体晶片的第二表面上的凸起和凹陷。 然后蚀刻半导体晶片的第二表面以形成锥形槽。 湿式蚀刻半导体晶片以减少由蚀刻引起的凸起和凹陷，并且绕着凹槽的一角。 湿蚀刻提高了绝缘膜，布线和保护膜的覆盖率，并提高了半导体器件的产量和可靠性。
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