发明申请
US20050054203A1 Polishing composition 有权
抛光组成

Polishing composition
摘要:
The present invention relates to a polishing composition that can be preferably used to polish a silicon wafer. The polishing composition includes a block polyether represented by the chemical formula HO-(EO)a—(PO)b-(EO)c—H, wherein EO represents an oxyethylene group, PO represents an oxypropylene group, each of a and c represents the polymerization degree of ethylene oxide, b represents the polymerization degree of propylene oxide, and each of a, b, and c is an integer of 1 or greater; silicon dioxide; a basic compound; at least either one of hydroxyethyl cellulose and polyvinyl alcohol; and water.
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