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发明申请
US20050059206A1 Integrated circuit devices having barrier layers between upper electrodes and dielectric layers and methods of fabricating the same 审中-公开
在上电极和电介质层之间具有阻挡层的集成电路器件及其制造方法

Integrated circuit devices having barrier layers between upper electrodes and dielectric layers and methods of fabricating the same
摘要：
Integrated circuit devices are provided including an integrated circuit substrate and a capacitor on the integrated circuit substrate. The capacitor includes a lower electrode on the integrated circuit substrate, a dielectric layer on the lower electrode and an upper electrode on the dielectric layer. A barrier layer is provided between the dielectric layer and the upper electrode. The barrier layer includes titanium oxide. Related methods of fabricating integrated circuit devices are also provided.
摘要（中）：

提供集成电路器件，其包括集成电路衬底和集成电路衬底上的电容器。 电容器包括集成电路基板上的下电极，下电极上的电介质层和电介质层上的上电极。 在电介质层和上电极之间设置阻挡层。 阻挡层包括氧化钛。 还提供了制造集成电路器件的相关方法。

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