公开(公告)号：US20050059206A1

公开(公告)日：2005-03-17

申请号：US10803640

申请日：2004-03-18

申请人： Jung-hee Chung ,  Jae-hyoung Choi ,  Yun-jung Lee ,  Han-jin Lim

发明人： Jung-hee Chung ,  Jae-hyoung Choi ,  Yun-jung Lee ,  Han-jin Lim

IPC分类号： H01L27/108 ,  H01L21/02 ,  H01L21/316 ,  H01L21/3205 ,  H01L23/522 ,  H01L21/8242 ,  H01L29/76

CPC分类号： H01L28/40 ,  H01L21/31604 ,  H01L21/31645 ,  H01L21/32051 ,  H01L23/5223 ,  H01L28/56 ,  H01L28/65 ,  H01L2924/0002 ,  H01L2924/00

摘要： Integrated circuit devices are provided including an integrated circuit substrate and a capacitor on the integrated circuit substrate. The capacitor includes a lower electrode on the integrated circuit substrate, a dielectric layer on the lower electrode and an upper electrode on the dielectric layer. A barrier layer is provided between the dielectric layer and the upper electrode. The barrier layer includes titanium oxide. Related methods of fabricating integrated circuit devices are also provided.

摘要翻译： 提供集成电路器件，其包括集成电路衬底和集成电路衬底上的电容器。 电容器包括集成电路基板上的下电极，下电极上的电介质层和电介质层上的上电极。 在电介质层和上电极之间设置阻挡层。 阻挡层包括氧化钛。 还提供了制造集成电路器件的相关方法。

公开(公告)号：US06472319B2

公开(公告)日：2002-10-29

申请号：US09851910

申请日：2001-05-09

申请人： Seok-jun Won ,  Yun-jung Lee ,  Soon-yeon Park ,  Cha-young Yoo ,  Doo-sup Hwang ,  Eun-ae Chung ,  Wan-don Kim

发明人： Seok-jun Won ,  Yun-jung Lee ,  Soon-yeon Park ,  Cha-young Yoo ,  Doo-sup Hwang ,  Eun-ae Chung ,  Wan-don Kim

IPC分类号： H01L2144

CPC分类号： H01L28/55 ,  H01L28/65

摘要： A method for manufacturing a capacitor of a semiconductor memory device by a two-step thermal treatment is provided. A lower electrode is formed on a semiconductor substrate. A dielectric layer is formed over the lower electrode. An upper electrode formed of a noble metal is formed over the dielectric layer. The resultant having the upper electrode undergoes a first thermal treatment under a first atmosphere including oxygen at a first temperature which is selected to be within a range of 200-600° C., which is lower than the oxidation temperature of the upper electrode. The first thermally treated resultant undergoes a second thermal treatment under a second atmosphere without oxygen at a second temperature which is selected to be within a range of 300-900° C., which is higher than the first temperature.

摘要翻译： 提供了通过两步热处理制造半导体存储器件的电容器的方法。 在半导体衬底上形成下电极。 在下电极上形成电介质层。 在电介质层上形成由贵金属形成的上电极。 具有上电极的所得物在包含氧的第一气氛下进行第一热处理，所述第一气氛在第一温度下被选择在低于上电极的氧化温度的200-600℃的范围内。 第一热处理产物在第二温度下在没有氧的第二气氛下进行第二热处理，第二温度选择在比第一温度高的300-900℃的范围内。

公开(公告)号：US06893915B2

公开(公告)日：2005-05-17

申请号：US10127651

申请日：2002-04-22

申请人： Hee-sook Park ,  Gil-heyun Choi ,  Seung-hwan Lee ,  Yun-jung Lee

发明人： Hee-sook Park ,  Gil-heyun Choi ,  Seung-hwan Lee ,  Yun-jung Lee

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/285 ,  H01L21/768 ,  H01L21/8242 ,  H01L27/06 ,  H01L27/105 ,  H01L27/108

CPC分类号： H01L21/76843 ,  H01L21/28562 ,  H01L27/0629 ,  H01L27/105 ,  H01L27/10814 ,  H01L27/10882 ,  H01L27/10894 ,  H01L28/75 ,  H01L28/90

摘要： A method for fabricating a semiconductor device is provided. A ruthenium layer is formed on a semiconductor substrate in a processing chamber. A barrier layer is formed on the ruthenium layer supplying a halide-free precursor in the processing chamber. A metal layer such as an aluminum layer, an aluminum alloy layer, a tungsten layer, or a copper layer is formed on the barrier layer. The barrier layer is one of a TiN layer, a TaN layer, a WN layer, and an MoN layer. The TiN layer is one of formed by using an MOCVD process and an ALD process, and the halide-free precursor is a titanium compound selected from the group consisting of pentakis(diethylamino) titanium, tetrakis(diethylamino) titanium, tetrakis(dimethylamino)titanium, and pentakis(dimethylamino)titanium. The TaN layer is formed by using one of an MOCVD process and an ALD process, and the halide-free precursor is a tantalum compound selected from the group consisting of t-butyltrikis(diethylamino)tantalum, pentakis(diethylamino)tantalum, tetrakis(dimethylamino)tantalum, and pentakis(dimethylamino)tantalum.

摘要翻译： 提供一种制造半导体器件的方法。 在处理室中的半导体衬底上形成钌层。 在处理室中提供无卤素前体的钌层上形成阻挡层。 在阻挡层上形成铝层，铝合金层，钨层，铜层等金属层。 阻挡层是TiN层，TaN层，WN层和MoN层之一。 TiN层是通过使用MOCVD法和ALD法形成的，并且不含卤化物的前体是选自五（二乙基氨基）钛，四（二乙基氨基）钛，四（二甲基氨基）钛，四 ，和五（二甲基氨基）钛。 通过使用MOCVD法和ALD法之一形成TaN层，无卤素前体是选自叔丁基（二乙氨基）钽，五（二乙基氨基）钽，四（二甲基氨基） ）钽和五（二甲基氨基）钽。

公开(公告)号：US20070259212A1

公开(公告)日：2007-11-08

申请号：US11778278

申请日：2007-07-16

申请人： Ki-yeon Park ,  Sung-tae Kim ,  Young-sun Kim ,  In-sung Park ,  Jae-hyun Yeo ,  Yun-jung Lee ,  Ki-vin Im

发明人： Ki-yeon Park ,  Sung-tae Kim ,  Young-sun Kim ,  In-sung Park ,  Jae-hyun Yeo ,  Yun-jung Lee ,  Ki-vin Im

IPC分类号： B32B9/00 ,  B32B19/00

CPC分类号： H01L21/0228 ,  C23C16/40 ,  C23C16/45529 ,  C23C16/45553 ,  H01L21/02178 ,  H01L21/02192 ,  H01L21/022 ,  H01L21/02337 ,  H01L21/3141 ,  H01L21/31604 ,  H01L27/1085

摘要： The present invention provides methods of forming metal thin films, lanthanum oxide films and high dielectric films. Compositions of metal thin films, lanthanum oxide films and high dielectric films are also provided. Further provided are semiconductor devices comprising the metal thin films, lanthanum oxide films and high dielectric films provided herein.

摘要翻译： 本发明提供形成金属薄膜，氧化镧膜和高介电膜的方法。 还提供了金属薄膜，氧化镧薄膜和高介电薄膜的组成。 还提供了包括金属薄膜，氧化镧膜和本文提供的高介电膜的半导体器件。

公开(公告)号：US06893501B2

公开(公告)日：2005-05-17

申请号：US10320407

申请日：2002-12-17

申请人： Ki-chul Kim ,  Sung-tae Kim ,  Young-sun Kim ,  Jeong-hee Chung ,  Wan-don Kim ,  Yun-jung Lee ,  Han-mei Choi

发明人： Ki-chul Kim ,  Sung-tae Kim ,  Young-sun Kim ,  Jeong-hee Chung ,  Wan-don Kim ,  Yun-jung Lee ,  Han-mei Choi

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/316 ,  H01L21/8242 ,  C30B25/04

CPC分类号： H01L28/57 ,  H01L21/02183 ,  H01L21/02271 ,  H01L21/02356 ,  H01L21/31637 ,  H01L27/1085 ,  H01L28/65

摘要： A method for manufacturing a capping layer covering a capacitor of a semiconductor memory device, preferably a metal-insulator-metal (MIM) capacitor, wherein the method includes forming a capacitor having a lower electrode, a dielectric layer and an upper electrode on a semiconductor substrate, forming a capping layer on the capacitor, and crystallizing the dielectric layer. Here, forming the capping layer includes stabilizing for deposition of the capping layer without providing oxygen gas, depositing the capping layer by providing a reaction source for the capping layer; and purging an inside of a reactor for forming the capping layer.

摘要翻译： 一种覆盖半导体存储器件的电容器，优选金属 - 绝缘体 - 金属（MIM）电容器的覆盖层的方法，其中所述方法包括在半导体上形成具有下电极，电介质层和上电极的电容器 衬底，在电容器上形成覆盖层，并使介电层结晶。 这里，形成覆盖层包括在不提供氧气的情况下沉积封盖层的稳定性，通过为封盖层提供反应源沉积覆盖层; 并且清洗用于形成覆盖层的反应器的内部。

公开(公告)号：US20050051828A1

公开(公告)日：2005-03-10

申请号：US10828596

申请日：2004-04-21

申请人： Ki-yeon Park ,  Sung-tae Kim ,  Young-sun Kim ,  In-sung Park ,  Jae-hyun Yeo ,  Yun-jung Lee ,  Ki-vin Im

发明人： Ki-yeon Park ,  Sung-tae Kim ,  Young-sun Kim ,  In-sung Park ,  Jae-hyun Yeo ,  Yun-jung Lee ,  Ki-vin Im

IPC分类号： H01L21/20 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8242 ,  H01B1/00 ,  H01L27/108 ,  H01L29/94 ,  H01L31/119 ,  H01L21/31

CPC分类号： H01L21/0228 ,  C23C16/40 ,  C23C16/45529 ,  C23C16/45553 ,  H01L21/02178 ,  H01L21/02192 ,  H01L21/022 ,  H01L21/02337 ,  H01L21/3141 ,  H01L21/31604 ,  H01L27/1085

摘要： The present invention provides methods of forming metal thin films, lanthanum oxide films and high dielectric films. Compositions of metal thin films, lanthanum oxide films and high dielectric films are also provided. Further provided are semiconductor devices comprising the metal thin films, lanthanum oxide films and high dielectric films provided herein.

摘要翻译： 本发明提供形成金属薄膜，氧化镧膜和高介电膜的方法。 还提供了金属薄膜，氧化镧薄膜和高介电薄膜的组成。 还提供了包括金属薄膜，氧化镧膜和本文提供的高介电膜的半导体器件。

公开(公告)号：US06680251B2

公开(公告)日：2004-01-20

申请号：US10080000

申请日：2002-02-21

申请人： Seok-jun Won ,  Cha-young Yoo ,  Sung-tae Kim ,  Young-wook Park ,  Yun-jung Lee ,  Soon-yeon Park

发明人： Seok-jun Won ,  Cha-young Yoo ,  Sung-tae Kim ,  Young-wook Park ,  Yun-jung Lee ,  Soon-yeon Park

IPC分类号： H01L2144

CPC分类号： H01L21/28556 ,  C23C16/0272 ,  C23C16/40 ,  H01L21/28568 ,  H01L28/55 ,  H01L28/60

摘要： A layer is formed by chemical vapor depositing a seeding layer of ruthenium oxide on a substrate at a chemical vapor deposition flow rate ratio of a ruthenium source to oxygen gas. A main layer of ruthenium is chemical vapor deposited on the seeding layer by increasing the chemical vapor deposition flow rate ratio of the ruthenium source to the oxygen gas.

摘要翻译： 通过以钌源与氧气的化学气相沉积流速比在化学气相沉积基底上的氧化钌晶面层形成层。 钌的主层通过提高钌源与氧气的化学气相沉积流速比化学气相沉积在接种层上。

公开(公告)号：US06599807B2

公开(公告)日：2003-07-29

申请号：US10034043

申请日：2001-12-20

申请人： Jae-soon Lim ,  Seung-hwan Lee ,  Han-mei Choi ,  Yun-jung Lee ,  Gab-jin Nam ,  Ki-yeon Park ,  Young-sun Kim ,  Sung-tae Kim

发明人： Jae-soon Lim ,  Seung-hwan Lee ,  Han-mei Choi ,  Yun-jung Lee ,  Gab-jin Nam ,  Ki-yeon Park ,  Young-sun Kim ,  Sung-tae Kim

IPC分类号： H01L2972

CPC分类号： H01L28/55

摘要： A method for manufacturing a capacitor of a semiconductor device is provided. The method includes the steps of: forming a first electrode on a semiconductor substrate; forming a dielectric layer on the first electrode; forming a second electrode on the dielectric layer; first annealing the capacitor having the first electrode, the dielectric layer, and the second electrode under oxygen atmosphere; and second annealing the capacitor having the first electrode, the dielectric layer, and the second electrode under vacuum.