Invention Application
- Patent Title: Method of forming low-k dielectrics
- Patent Title (中): 低k电介质的形成方法
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Application No.: US10796286Application Date: 2004-03-10
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Publication No.: US20050064726A1Publication Date: 2005-03-24
- Inventor: Jason Reid , Nigel Hacker , Nina Pirila , Juha Rantala , William McLaughlin
- Applicant: Jason Reid , Nigel Hacker , Nina Pirila , Juha Rantala , William McLaughlin
- Main IPC: H01L21/312
- IPC: H01L21/312 ; H01L21/314 ; B32B9/04 ; C22C29/00 ; H01L21/31
Abstract:
A method of forming a low dielectric constant structure. The method comprises providing at a first temperature a dielectric material having a first dielectric constant and a first elastic modulus, and curing the dielectric material by a thermal curing process, in which the material is heated to a second temperature by increasing the temperature at an average rate of at least 1° C. per second. As a result a densified, dielectric material is obtained which has a low dielectric constant.
Public/Granted literature
- US07622399B2 Method of forming low-k dielectrics using a rapid curing process Public/Granted day:2009-11-24
Information query
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