-
公开(公告)号:US20050064726A1
公开(公告)日:2005-03-24
申请号:US10796286
申请日:2004-03-10
申请人: Jason Reid , Nigel Hacker , Nina Pirila , Juha Rantala , William McLaughlin
发明人: Jason Reid , Nigel Hacker , Nina Pirila , Juha Rantala , William McLaughlin
IPC分类号: H01L21/312 , H01L21/314 , B32B9/04 , C22C29/00 , H01L21/31
CPC分类号: H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/02282 , H01L21/02318 , H01L21/3121 , Y10T428/31663 , Y10T428/31678
摘要: A method of forming a low dielectric constant structure. The method comprises providing at a first temperature a dielectric material having a first dielectric constant and a first elastic modulus, and curing the dielectric material by a thermal curing process, in which the material is heated to a second temperature by increasing the temperature at an average rate of at least 1° C. per second. As a result a densified, dielectric material is obtained which has a low dielectric constant.
摘要翻译: 一种形成低介电常数结构的方法。 该方法包括在第一温度下提供具有第一介电常数和第一弹性模量的介电材料,并通过热固化工艺固化介电材料,其中通过以平均值升高温度将材料加热至第二温度 速率至少为1℃/秒。 结果获得了具有低介电常数的致密的介电材料。