发明申请
- 专利标题： Memory cell with nanocrystals or nanodots
- 专利标题（中）： 具有纳米晶体或纳米点的记忆体
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申请号： US10916013申请日： 2004-08-11
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公开(公告)号： US20050067659A1公开(公告)日： 2005-03-31
- 发明人: Martin Gutsche , Josef Willer , Cay-Uwe Pinnow , Ralf Symanczyk
- 申请人： Martin Gutsche , Josef Willer , Cay-Uwe Pinnow , Ralf Symanczyk
- 优先权： DE10336876.0 20030811
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/336 ; H01L21/8239 ; H01L21/8247 ; H01L27/10 ; H01L27/105 ; H01L27/115 ; H01L29/423 ; H01L29/76
摘要：
The storage layer (6) is in each case present above a region in which the channel region (3) adjoins a source/drain region (2) and is in each case interrupted above an intervening middle part of the channel region (3). The storage layer (6) is formed by material of the gate dielectric (4) and contains silicon or germanium nanocrystals or nanodots introduced through ion implantation. The gate electrode (5) is widened at the flanks by electrically conductive spacers (7).
公开/授权文献
- US07119395B2 Memory cell with nanocrystals or nanodots 公开/授权日：2006-10-10
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