Invention Application
- Patent Title: Oxide-nitride stack gate dielectric
- Patent Title (中): 氧化氮化物堆叠栅极电介质
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Application No.: US10950332Application Date: 2004-09-24
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Publication No.: US20050067663A1Publication Date: 2005-03-31
- Inventor: Krishnaswamy Ramkumar , Sundar Narayanan
- Applicant: Krishnaswamy Ramkumar , Sundar Narayanan
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L21/314 ; H01L29/49 ; H01L29/78 ; H01L21/20
Abstract:
A method of making a semiconductor structure comprises forming an oxide layer on a substrate; forming a silicon nitride layer on the oxide layer; annealing the layers in NO; and annealing the layers in ammonia. The equivalent oxide thickness of the oxide layer and the silicon nitride layer together is at most 25 Angstroms.
Public/Granted literature
- US07371637B2 Oxide-nitride stack gate dielectric Public/Granted day:2008-05-13
Information query
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