发明申请
- 专利标题: Method of forming a recess channel trench pattern, and fabricating a recess channel transistor
- 专利标题(中): 形成凹槽沟槽图案的方法,以及制造凹槽通道晶体管
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申请号: US10917615申请日: 2004-08-13
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公开(公告)号: US20050077568A1公开(公告)日: 2005-04-14
- 发明人: Jong-Chul Park , Yong-Sun Ko , Tae-Hyuk Ahn
- 申请人: Jong-Chul Park , Yong-Sun Ko , Tae-Hyuk Ahn
- 优先权: KR2003-70638 20031010
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L21/28 ; H01L21/336 ; H01L21/8234 ; H01L21/8242 ; H01L27/108 ; H01L29/423 ; H01L29/76 ; H01L21/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119
摘要:
A method of forming a recess channel trench pattern for forming a recess channel transistor is provided. A mask layer is formed on a semiconductor substrate, which is then patterned to expose an active region and a portion of an adjacent device isolating layer with an isolated hole type pattern. Using this mask layer the semiconductor substrate and the device isolating layer portion are selectively and anisotropically etched, thereby forming a recess channel trench with an isolated hole type pattern. The mask layer may be patterned to be a curved line type. In this case, the once linear portion is curved to allow the device isolating layer portion exposed by the patterned mask layer to be spaced apart from an adjacent active region. The semiconductor substrate and the device isolating layer portion are then etched, thereby forming a recess channel trench with a curved line type pattern.