发明申请
- 专利标题： Reduction of dopant loss in a gate structure
- 专利标题（中）： 减少栅极结构中的掺杂剂损耗
-
申请号： US10681399申请日： 2003-10-08
-
公开(公告)号： US20050079655A1公开(公告)日： 2005-04-14
- 发明人: Yuanning Chen , Mark Visokay
- 申请人： Yuanning Chen , Mark Visokay
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/311 ; H01L21/314 ; H01L21/316 ; H01L21/332 ; H01L21/336
摘要：
A semiconductor device includes offset spacers that contact opposing side surfaces of a gate of a gate structure. The offset spacers can be formed by selectively depositing an oxide layer over the gate and the semiconductor substrate so that the opposing side surfaces of the gate e are substantially free of the oxide layer. Offset spacers can then be formed that contact the opposing side surfaces of the gate.
公开/授权文献
- US07276408B2 Reduction of dopant loss in a gate structure 公开/授权日：2007-10-02
信息查询
IPC分类:
