发明申请
- 专利标题: Germanate gate dielectrics for semiconductor devices
- 专利标题(中): 用于半导体器件的德语栅极电介质
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申请号: US10689222申请日: 2003-10-20
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公开(公告)号: US20050082624A1公开(公告)日: 2005-04-21
- 发明人: Evgeni Gousev , Alessandro Callegari , Dianne Lacey , Deborah Neumayer , Huiling Shang
- 申请人: Evgeni Gousev , Alessandro Callegari , Dianne Lacey , Deborah Neumayer , Huiling Shang
- 主分类号: H01L21/28
- IPC分类号: H01L21/28 ; H01L21/316 ; H01L29/51 ; H01L29/94
摘要:
A structure, and method of fabrication, for high performance semiconductor field effect devices is disclosed. These devices are having a gate dielectric containing a germanate material. In representative embodiments the gate dielectric is essentially a layer of a germanate material. The chemical composition of such materials is MezGexOy, where Me stands for a metal with high ion polarizability, and x, y, and z are non-zero integers. Such a gate dielectric is advantageous, from the point of view of dielectric constant, barrier height, carrier mobility, thermal stability, and interface stability.