发明申请
- 专利标题： Compound semiconductor device and method of fabricating the same
- 专利标题（中）： 化合物半导体器件及其制造方法
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申请号： US10813085申请日： 2004-03-31
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公开(公告)号： US20050087766A1公开(公告)日： 2005-04-28
- 发明人: Toshihide Kikkawa
- 申请人： Toshihide Kikkawa
- 申请人地址： JP Kawasaki
- 专利权人： FUJITSU LIMITED
- 当前专利权人： FUJITSU LIMITED
- 当前专利权人地址： JP Kawasaki
- 优先权： JP2003-367932 20031028
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/20 ; H01L21/205 ; H01L21/335 ; H01L21/338 ; H01L29/20 ; H01L29/778 ; H01L29/812 ; H01L29/06
摘要：
In formation-by-growth of an AlGaN layer 3 as having a double-layered structure, a non-doped AlGaN layer (i-AlGaN layer) having an Al compositional ratio of approximately 15% is formed to a thickness of approximately 3 nm on an i-GaN layer, and further thereon, an AlGaN layer (n-AlGaN layer) doped with Si in a concentration of approximately 2×1018/cm3 and having an Al compositional ratio of approximately 15% is formed to a thickness of approximately 17 nm.
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