发明申请
- 专利标题： Nitrided ultrathin gate dielectrics
- 专利标题（中）： 氮化超薄栅极电介质
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申请号： US10982999申请日： 2004-11-05
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公开(公告)号： US20050087822A1公开(公告)日： 2005-04-28
- 发明人: Mukesh Khare , Christopher D'Emic , Thomas Hwang , Paul Jamison , James Quinlivan , Beth Ward
- 申请人： Mukesh Khare , Christopher D'Emic , Thomas Hwang , Paul Jamison , James Quinlivan , Beth Ward
- 主分类号： H01L21/265
- IPC分类号： H01L21/265 ; H01L21/28 ; H01L21/314 ; H01L21/318 ; H01L29/51 ; H01L29/78 ; H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119 ; H01L21/31 ; H01L21/469
摘要：
A method for forming a gate dielectric for an integrated circuit device. In an exemplary embodiment of the invention, the method includes forming an initial oxynitride layer upon a substrate material, the oxynitride layer having an initial physical thickness. The initial oxynitride layer is then subjected to a plasma nitridation, the plasma nitridation resulting in final oxynitride layer having a final physical thickness.
公开/授权文献
- US07109559B2 Nitrided ultra thin gate dielectrics 公开/授权日：2006-09-19