发明申请
US20050090087A1 Nickel silicide - silicon nitride adhesion through surface passivation
审中-公开
硅化镍 - 氮化硅通过表面钝化附着
- 专利标题： Nickel silicide - silicon nitride adhesion through surface passivation
- 专利标题（中）： 硅化镍 - 氮化硅通过表面钝化附着
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申请号： US10977433申请日： 2004-10-29
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公开(公告)号： US20050090087A1公开(公告)日： 2005-04-28
- 发明人: Jiong-Ping Lu , Glenn Tessmer , Melissa Hewson , Donald Miles , Ralf Willecke , Andrew McKerrow , Brian Kirkpatrick , Clinton Montgomery
- 申请人： Jiong-Ping Lu , Glenn Tessmer , Melissa Hewson , Donald Miles , Ralf Willecke , Andrew McKerrow , Brian Kirkpatrick , Clinton Montgomery
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/285 ; H01L21/318 ; H01L21/3205 ; H01L21/321 ; H01L21/336 ; H01L21/768 ; H01L23/52 ; H01L23/522 ; H01L29/78 ; H01L29/786 ; H01L21/4763 ; H01L21/44
摘要：
A process for forming nickel silicide and silicon nitride structure in a semiconductor integrated circuit device is described. Good adhesion between the nickel silicide and the silicon nitride is accomplished by passivating the nickel silicide surface with nitrogen. The passivation may be performed by treating the nickel silicide surface with plasma activated nitrogen species. An alternative passivation method is to cover the nickel silicide with a film of metal nitride and heat the substrate to about 500° C. Another alternative method is to sputter deposit silicon nitride on top of nickel silicide.
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