公开(公告)号：US20050090087A1

公开(公告)日：2005-04-28

申请号：US10977433

申请日：2004-10-29

Applicant: Jiong-Ping Lu ,  Glenn Tessmer ,  Melissa Hewson ,  Donald Miles ,  Ralf Willecke ,  Andrew McKerrow ,  Brian Kirkpatrick ,  Clinton Montgomery

Inventor： Jiong-Ping Lu ,  Glenn Tessmer ,  Melissa Hewson ,  Donald Miles ,  Ralf Willecke ,  Andrew McKerrow ,  Brian Kirkpatrick ,  Clinton Montgomery

IPC: H01L21/28 ,  H01L21/285 ,  H01L21/318 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/336 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L29/78 ,  H01L29/786 ,  H01L21/4763 ,  H01L21/44

CPC classification number: H01L21/28052 ,  H01L21/28518 ,  H01L21/3185 ,  H01L21/321 ,  H01L21/3211 ,  H01L21/76834 ,  H01L29/665

Abstract: A process for forming nickel silicide and silicon nitride structure in a semiconductor integrated circuit device is described. Good adhesion between the nickel silicide and the silicon nitride is accomplished by passivating the nickel silicide surface with nitrogen. The passivation may be performed by treating the nickel silicide surface with plasma activated nitrogen species. An alternative passivation method is to cover the nickel silicide with a film of metal nitride and heat the substrate to about 500° C. Another alternative method is to sputter deposit silicon nitride on top of nickel silicide.

Abstract translation: 描述了在半导体集成电路器件中形成硅化镍和氮化硅结构的工艺。 通过用氮气钝化硅化镍表面，可以实现硅化镍和氮化硅之间的良好粘附。 可以通过用等离子体活化的氮物种处理硅化镍表面来进行钝化。 替代的钝化方法是用金属氮化物膜覆盖硅化镍，并将衬底加热至约500℃。另一种替代方法是在硅化镍顶部溅射沉积氮化硅。