- 专利标题: Magnetoresistance effect element
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申请号: US11001174申请日: 2004-12-02
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公开(公告)号: US20050094322A1公开(公告)日: 2005-05-05
- 发明人: Hideaki Fukuzawa , Katsuhiko Koi , Hiromi Fuke , Hiroshi Tomita , Hitoshi Iwasaki , Masashi Sahashi
- 申请人: Hideaki Fukuzawa , Katsuhiko Koi , Hiromi Fuke , Hiroshi Tomita , Hitoshi Iwasaki , Masashi Sahashi
- 申请人地址: JP Tokyo
- 专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址: JP Tokyo
- 优先权: JP2000-268934 20000905; JP2000-269099 20000905
- 主分类号: G11B5/39
- IPC分类号: G11B5/39 ; H01F10/32 ; G11B5/127 ; C23C14/00
摘要:
There are provided a magnetoresistance effect element, a magnetic head, a magnetic head assembly and a magnetic recording system, which have high sensitivity and high reliability. The magnetoresistance effect element has two ferromagnetic layers, a non-magnetic layer provided between the ferromagnetic layers, and a layer containing an oxide or nitride as a principal component, wherein the layer containing the oxide or nitride as the principal component contains a magnetic transition metal element which does not bond to oxygen and nitrogen and which is at least one of Co, Fe and Ni.
公开/授权文献
- US07476414B2 Magnetoresistance effect element 公开/授权日:2009-01-13
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