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公开(公告)号：US07130163B2
公开(公告)日：2006-10-31
申请号：US10958250
申请日：2004-10-06
申请人： Hideaki Fukuzawa , Katsuhiko Koi , Hiromi Fuke , Hiroshi Tomita , Hitoshi Iwasaki , Masashi Sahashi
发明人： Hideaki Fukuzawa , Katsuhiko Koi , Hiromi Fuke , Hiroshi Tomita , Hitoshi Iwasaki , Masashi Sahashi
IPC分类号： G11B5/33
CPC分类号： H01F10/3272 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/3259 , H01F10/3295 , H01F41/325 , H01L43/08 , H01L43/10 , Y10T428/1114 , Y10T428/1121
摘要： There are provided a magnetoresistance effect element, a magnetic head, a magnetic head assembly and a magnetic recording system, which have high sensitivity and high reliability. The magnetoresistance effect element has two ferromagnetic layers, a non-magnetic layer provided between the ferromagnetic layers, and a layer containing an oxide or nitride as a principal component, wherein the layer containing the oxide or nitride as the principal component contains a magnetic transition metal element which does not bond to oxygen and nitrogen and which is at least one of Co, Fe and Ni.
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2.发明授权公开(公告)号：US08049999B2
公开(公告)日：2011-11-01
申请号：US12347543
申请日：2008-12-31
申请人： Hideaki Fukuzawa , Katsuhiko Koi , Hiromi Fuke , Hiroshi Tomita , Hitoshi Iwasaki , Masashi Sahashi
发明人： Hideaki Fukuzawa , Katsuhiko Koi , Hiromi Fuke , Hiroshi Tomita , Hitoshi Iwasaki , Masashi Sahashi
IPC分类号： G11B5/39
CPC分类号： H01F10/3272 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/3259 , H01F10/3295 , H01F41/325 , H01L43/08 , H01L43/10 , Y10T428/1114 , Y10T428/1121
摘要： There are provided a magnetoresistance effect element, a magnetic head, a magnetic head assembly and a magnetic recording system, which have high sensitivity and high reliability. The magnetoresistance effect element has two ferromagnetic layers, a non-magnetic layer provided between the ferromagnetic layers, and a layer containing an oxide or nitride as a principal component, wherein the layer containing the oxide or nitride as the principal component contains a magnetic transition metal element which does not bond to oxygen and nitrogen and which is at least one of Co, Fe and Ni.
摘要翻译： 提供了具有高灵敏度和高可靠性的磁阻效应元件，磁头，磁头组件和磁记录系统。 磁阻效应元件具有两个铁磁层，设置在铁磁层之间的非磁性层和包含以氧化物或氮化物为主要成分的层，其中以氧化物或氮化物为主要成分的层含有磁性过渡金属 元素，其不结合氧和氮并且是Co，Fe和Ni中的至少一种。
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公开(公告)号：US20050047028A1
公开(公告)日：2005-03-03
申请号：US10958250
申请日：2004-10-06
申请人： Hideaki Fukuzawa , Katsuhiko Koi , Hiromi Fuke , Hiroshi Tomita , Hitoshi Iwasaki , Masashi Sahashi
发明人： Hideaki Fukuzawa , Katsuhiko Koi , Hiromi Fuke , Hiroshi Tomita , Hitoshi Iwasaki , Masashi Sahashi
CPC分类号： H01F10/3272 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/3259 , H01F10/3295 , H01F41/325 , H01L43/08 , H01L43/10 , Y10T428/1114 , Y10T428/1121
摘要： There are provided a magnetoresistance effect element, a magnetic head, a magnetic head assembly and a magnetic recording system, which have high sensitivity and high reliability. The magnetoresistance effect element has two ferromagnetic layers, a non-magnetic layer provided between the ferromagnetic layers, and a layer containing an oxide or nitride as a principal component, wherein the layer containing the oxide or nitride as the principal component contains a magnetic transition metal element which does not bond to oxygen and nitrogen and which is at least one of Co, Fe and Ni.
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公开(公告)号：US06853520B2
公开(公告)日：2005-02-08
申请号：US09944075
申请日：2001-09-04
申请人： Hideaki Fukuzawa , Katsuhiko Koi , Hiromi Fuke , Hiroshi Tomita , Hitoshi Iwasaki , Masashi Sahashi
发明人： Hideaki Fukuzawa , Katsuhiko Koi , Hiromi Fuke , Hiroshi Tomita , Hitoshi Iwasaki , Masashi Sahashi
CPC分类号： H01F10/3272 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/3259 , H01F10/3295 , H01F41/325 , H01L43/08 , H01L43/10 , Y10T428/1114 , Y10T428/1121
摘要： There are provided a magnetoresistance effect element, a magnetic head, a magnetic head assembly and a magnetic recording system, which have high sensitivity and high reliability. The magnetoresistance effect element has two ferromagnetic layers, a non-magnetic layer provided between the ferromagnetic layers, and a layer containing an oxide or nitride as a principal component, wherein the layer containing the oxide or nitride as the principal component contains a magnetic transition metal element which does not bond to oxygen and nitrogen and which is at least one of Co, Fe and Ni.
摘要翻译： 提供了具有高灵敏度和高可靠性的磁阻效应元件，磁头，磁头组件和磁记录系统。 磁阻效应元件具有两个铁磁层，设置在铁磁层之间的非磁性层和包含以氧化物或氮化物为主要成分的层，其中以氧化物或氮化物为主要成分的层含有磁性过渡金属 元素，其不结合氧和氮并且是Co，Fe和Ni中的至少一种。
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5.发明授权公开(公告)号：US08259419B2
公开(公告)日：2012-09-04
申请号：US13242190
申请日：2011-09-23
申请人： Hideaki Fukuzawa , Katsuhiko Koi , Hiromi Fuke , Hiroshi Tomita , Hitoshi Iwasaki , Masashi Sahashi
发明人： Hideaki Fukuzawa , Katsuhiko Koi , Hiromi Fuke , Hiroshi Tomita , Hitoshi Iwasaki , Masashi Sahashi
IPC分类号： G11B5/39
CPC分类号： H01F10/3272 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/3259 , H01F10/3295 , H01F41/325 , H01L43/08 , H01L43/10 , Y10T428/1114 , Y10T428/1121
摘要： There are provided a magnetoresistance effect element, a magnetic head, a magnetic head assembly and a magnetic recording system, which have high sensitivity and high reliability. The magnetoresistance effect element has two ferromagnetic layers, a non-magnetic layer provided between the ferromagnetic layers, and a layer containing an oxide or nitride as a principal component, wherein the layer containing the oxide or nitride as the principal component contains a magnetic transition metal element which does not bond to oxygen and nitrogen and which is at least one of Co, Fe and Ni.
摘要翻译： 提供了具有高灵敏度和高可靠性的磁阻效应元件，磁头，磁头组件和磁记录系统。 磁阻效应元件具有两个铁磁层，设置在铁磁层之间的非磁性层和包含以氧化物或氮化物为主要成分的层，其中以氧化物或氮化物为主要成分的层含有磁性过渡金属 元素，其不结合氧和氮并且是Co，Fe和Ni中的至少一种。
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公开(公告)号：US20090109581A1
公开(公告)日：2009-04-30
申请号：US12347543
申请日：2008-12-31
申请人： Hideaki FUKUZAWA , Katsuhiko Koi , Hiromi Fuke , Hiroshi Tomita , Hitoshi Iwasaki , Masashi Sahashi
发明人： Hideaki FUKUZAWA , Katsuhiko Koi , Hiromi Fuke , Hiroshi Tomita , Hitoshi Iwasaki , Masashi Sahashi
IPC分类号： G11B5/33
CPC分类号： H01F10/3272 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/3259 , H01F10/3295 , H01F41/325 , H01L43/08 , H01L43/10 , Y10T428/1114 , Y10T428/1121
摘要： There are provided a magnetoresistance effect element, a magnetic head, a magnetic head assembly and a magnetic recording system, which have high sensitivity and high reliability. The magnetoresistance effect element has two ferromagnetic layers, a non-magnetic layer provided between the ferromagnetic layers, and a layer containing an oxide or nitride as a principal component, wherein the layer containing the oxide or nitride as the principal component contains a magnetic transition metal element which does not bond to oxygen and nitrogen and which is at least one of Co, Fe and Ni.
摘要翻译： 提供了具有高灵敏度和高可靠性的磁阻效应元件，磁头，磁头组件和磁记录系统。 磁阻效应元件具有两个铁磁层，设置在铁磁层之间的非磁性层和包含以氧化物或氮化物为主要成分的层，其中以氧化物或氮化物为主要成分的层含有磁性过渡金属 元素，其不结合氧和氮并且是Co，Fe和Ni中的至少一种。
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公开(公告)号：US07476414B2
公开(公告)日：2009-01-13
申请号：US11001174
申请日：2004-12-02
申请人： Hideaki Fukuzawa , Katsuhiko Koi , Hiromi Fuke , Hiroshi Tomita , Hitoshi Iwasaki , Masashi Sahashi
发明人： Hideaki Fukuzawa , Katsuhiko Koi , Hiromi Fuke , Hiroshi Tomita , Hitoshi Iwasaki , Masashi Sahashi
CPC分类号： H01F10/3272 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/3259 , H01F10/3295 , H01F41/325 , H01L43/08 , H01L43/10 , Y10T428/1114 , Y10T428/1121
摘要： There are provided a magnetoresistance effect element, a magnetic head, a magnetic head assembly and a magnetic recording system, which have high sensitivity and high reliability. The magnetoresistance effect element has two ferromagnetic layers, a non-magnetic layer provided between the ferromagnetic layers, and a layer containing an oxide or nitride as a principal component, wherein the layer containing the oxide or nitride as the principal component contains a magnetic transition metal element which does not bond to oxygen and nitrogen and which is at least one of Co, Fe and Ni.
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公开(公告)号：US20050094322A1
公开(公告)日：2005-05-05
申请号：US11001174
申请日：2004-12-02
申请人： Hideaki Fukuzawa , Katsuhiko Koi , Hiromi Fuke , Hiroshi Tomita , Hitoshi Iwasaki , Masashi Sahashi
发明人： Hideaki Fukuzawa , Katsuhiko Koi , Hiromi Fuke , Hiroshi Tomita , Hitoshi Iwasaki , Masashi Sahashi
CPC分类号： H01F10/3272 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/3259 , H01F10/3295 , H01F41/325 , H01L43/08 , H01L43/10 , Y10T428/1114 , Y10T428/1121
摘要： There are provided a magnetoresistance effect element, a magnetic head, a magnetic head assembly and a magnetic recording system, which have high sensitivity and high reliability. The magnetoresistance effect element has two ferromagnetic layers, a non-magnetic layer provided between the ferromagnetic layers, and a layer containing an oxide or nitride as a principal component, wherein the layer containing the oxide or nitride as the principal component contains a magnetic transition metal element which does not bond to oxygen and nitrogen and which is at least one of Co, Fe and Ni.
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9.发明授权公开(公告)号：US06754053B2
公开(公告)日：2004-06-22
申请号：US10108472
申请日：2002-03-29
申请人： Masatoshi Yoshikawa , Masashi Sahashi , Katsuhiko Koi , Hitoshi Iwasaki , Hiromi Yuasa , Hideaki Fukuzawa
发明人： Masatoshi Yoshikawa , Masashi Sahashi , Katsuhiko Koi , Hitoshi Iwasaki , Hiromi Yuasa , Hideaki Fukuzawa
IPC分类号： G11B5127
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/3143 , G11B5/3903 , G11B2005/3996 , H01F10/324 , H01F10/3254 , H01F41/325
摘要： A magnetoresistance effect film including a magnetically pinned layer, a non-magnetic intermediate layer and a magnetically free layer has sidewall layers covering at least side surfaces of the magnetically pinned layer and the non-magnetic intermediate layer. The sidewall layers are made of a high-resistance oxide, nitride, fluoride, boride, sulfide or carbide having a specular reflection effect against conduction electrons, thereby to prevent non-elastic scattering of electrons and missing of spin information on side surfaces of the magnetoresistance effect film.
摘要翻译： 包括磁性钉扎层，非磁性中间层和无磁性层的磁阻效应膜具有覆盖磁性被钉扎层和非磁性中间层的至少侧面的侧壁层。 侧壁层由具有对传导电子的镜面反射效应的高电阻氧化物，氮化物，氟化物，硼化物，硫化物或碳化物制成，从而防止电子的非弹性散射和在磁阻的侧表面上缺少自旋信息 效果片。
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10.发明授权Magnetoresistance effect element, magnetic head, magnetic head assembly, magnetic storage system 有权磁阻效应元件，磁头，磁头组件，磁存储系统公开(公告)号：US06338899B1
公开(公告)日：2002-01-15
申请号：US09332440
申请日：1999-06-14
申请人： Hideaki Fukuzawa , Yuzo Kamiguchi , Katsuhiko Koui , Shin-ichi Nakamura , Hitoshi Iwasaki , Kazuhiro Saito , Hiromi Fuke , Masatoshi Yoshikawa , Susumu Hashimoto , Masashi Sahashi
发明人： Hideaki Fukuzawa , Yuzo Kamiguchi , Katsuhiko Koui , Shin-ichi Nakamura , Hitoshi Iwasaki , Kazuhiro Saito , Hiromi Fuke , Masatoshi Yoshikawa , Susumu Hashimoto , Masashi Sahashi
IPC分类号： G11B566
CPC分类号： H01F10/30 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3932 , G11B5/66 , G11B2005/3996 , H01F10/3272 , H01F10/3295 , H01F41/325 , Y10S428/90 , Y10T428/1107 , Y10T428/1121 , Y10T428/1143 , Y10T428/115 , Y10T428/1171 , Y10T428/1193 , Y10T428/12326 , Y10T428/12465 , Y10T428/12986 , Y10T428/265
摘要： Disclosed are a high-sensitivity and high-reliability magnetoresistance effect device (MR device) in which bias point designing is easy, and also a magnetic head, a magnetic head assembly and a magnetic recording/reproducing system incorporating the MR device. In the MR device incorporating a spin valve film, the magnetization direction of the free layer is at a certain angle to the magnetization direction of a second ferromagnetic layer therein when the applied magnetic field is zero. In this, the pinned magnetic layer comprises a pair of ferromagnetic films as antiferromagnetically coupled to each other via a coupling film existing therebetween. The device is provided with a means of keeping the magnetization direction of either one of the pair of ferromagnetic films constituting the pinned magnetic layer, and with a nonmagnetic high-conductivity layer as disposed adjacent to a first ferromagnetic layer on the side opposite to the side on which the first ferromagnetic layer is contacted with a nonmagnetic spacer layer. With that constitution, the device has extremely high sensitivity, and the bias point in the device is well controlled.
摘要翻译： 公开了一种容易进行偏置设计的高灵敏度和高可靠性磁阻效应器件（MR器件），以及包含MR器件的磁头，磁头组件和磁记录/再现系统。 在包含自旋阀膜的MR装置中，当施加的磁场为零时，自由层的磁化方向与其中第二铁磁性层的磁化方向成一定角度。 在此，被钉扎的磁性层包括通过其间存在的耦合膜彼此反铁磁耦合的一对铁磁膜。 该装置设置有保持构成被钉扎磁性层的一对铁磁膜中的任一个的磁化方向以及与侧面相反侧的第一铁磁层相邻设置的非磁性高导电性层 第一铁磁层与非磁性间隔层接触。 利用该结构，该器件具有极高的灵敏度，并且器件中的偏置点被良好地控制。
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