发明申请
- 专利标题： CONDUCTIVE MEMORY STACK WITH NON-UNIFORM WIDTH
- 专利标题（中）： 具有非均匀宽度的导电记忆层
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申请号： US10605963申请日： 2003-11-10
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公开(公告)号： US20050101086A1公开(公告)日： 2005-05-12
- 发明人: Darrell Rinerson , Steve Hsia , Steven Longcor , Wayne Kinney , Edmond Ward , Christophe Chevallier
- 申请人： Darrell Rinerson , Steve Hsia , Steven Longcor , Wayne Kinney , Edmond Ward , Christophe Chevallier
- 申请人地址： US CA Sunnyvale 94085
- 专利权人： UNITY SEMICONDUCTOR INC.
- 当前专利权人： UNITY SEMICONDUCTOR INC.
- 当前专利权人地址： US CA Sunnyvale 94085
- 主分类号： G11C11/56
- IPC分类号： G11C11/56 ; G11C13/00 ; H01L21/8246 ; H01L27/115 ; H01L41/24 ; H01L21/336
摘要：
A conductive memory stack is provided. The memory stack includes a bottom electrode, a top electrode and a multi-resistive state element that is sandwiched between the electrodes. The bottom electrode can be described as having a top face with a first surface area, the top electrode has a bottom face with a second surface area and the multi-resistive state element has a bottom face with a third surface area and a top face with a fourth surface area. The multi-resistive state element's bottom face is in contact with the bottom electrode's top face and the multi-resistive state element's top face is in contact with the top electrode's bottom face. Furthermore, the fourth surface area is not equal to the second surface area.
公开/授权文献
- US07009235B2 Conductive memory stack with non-uniform width 公开/授权日：2006-03-07