发明申请
- 专利标题： Semiconductor device having trench capacitor and fabrication method for the same
- 专利标题（中）： 具有沟槽电容器的半导体器件及其制造方法
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申请号： US10922228申请日： 2004-08-20
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公开(公告)号： US20050101094A1公开(公告)日： 2005-05-12
- 发明人: Masaru Kito , Masaru Kido , Hideaki Aochi , Toshiharu Tanaka , Ryota Katsumata , Hideki Inokuma , Yoichi Takegawa
- 申请人： Masaru Kito , Masaru Kido , Hideaki Aochi , Toshiharu Tanaka , Ryota Katsumata , Hideki Inokuma , Yoichi Takegawa
- 申请人地址： JP Minato-ku
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Minato-ku
- 优先权： JPP2003-381520 20031111
- 主分类号： H01L27/108
- IPC分类号： H01L27/108 ; H01L21/8242 ; H01L29/94 ; H01L21/336 ; H01L29/76 ; H01L31/119
摘要：
A semiconductor device includes a semiconductor substrate with a trench; a capacitor; a collar oxide film arranged on a portion of a side of the trench above the capacitor; a storage node arranged on a side of the collar oxide film in an upper portion of the trench and electrically connected to a storage electrode of the capacitor; a select transistor provided on a surface of the semiconductor substrate and having a source region in contact with the trench; a spacer covering a side of the source region; and a surface strap contact arranged upon the spacers, the source region and the storage node.
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