发明申请
US20050101113A1 METHOD FOR MAKING A SEMICONDUCTOR DEVICE HAVING A METAL GATE ELECTRODE
有权
制造具有金属栅极电极的半导体器件的方法
- 专利标题： METHOD FOR MAKING A SEMICONDUCTOR DEVICE HAVING A METAL GATE ELECTRODE
- 专利标题（中）： 制造具有金属栅极电极的半导体器件的方法
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申请号： US10704497申请日： 2003-11-06
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公开(公告)号： US20050101113A1公开(公告)日： 2005-05-12
- 发明人: Justin Brask , Mark Doczy , Jack Kavalieros , Uday Shah , Matthew Metz , Robert Chau , Robert Turkot
- 申请人： Justin Brask , Mark Doczy , Jack Kavalieros , Uday Shah , Matthew Metz , Robert Chau , Robert Turkot
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/3213 ; H01L21/8238 ; H01L29/49 ; H01L21/3205
摘要：
A method for making a semiconductor device is described. That method comprises forming a dielectric layer on a substrate, and forming a first metal layer on a first part of the dielectric layer, leaving a second part of the dielectric layer exposed. After a second metal layer is formed on both the first metal layer and the second part of the dielectric layer, a masking layer is formed on the second metal layer.
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