发明申请
- 专利标题： Semiconductor device and method for fabricating same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11020271申请日： 2004-12-27
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公开(公告)号： US20050106894A1公开(公告)日： 2005-05-19
- 发明人: Nobutoshi Aoki , Koichi Kato , Katsuyuki Sekine , Ichiro Mizushima
- 申请人： Nobutoshi Aoki , Koichi Kato , Katsuyuki Sekine , Ichiro Mizushima
- 申请人地址： JP TOKYO
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP TOKYO
- 优先权： JP2002-63117 20020308
- 主分类号： H01L21/318
- IPC分类号： H01L21/318 ; H01L21/28 ; H01L21/316 ; H01L29/51 ; H01L29/78 ; H01L23/58 ; H01L21/31 ; H01L21/469
摘要：
An aspect of the present invention includes; a silicon oxynitride film having an oxynitride layer which is formed on at least the surface of a silicon substrate and in which nitrogen atoms are in a three-coordinate bond state, and a silicon oxide layer which is formed between said oxynitride layer and said silicon substrate.
公开/授权文献
- US07160818B2 Semiconductor device and method for fabricating same 公开/授权日：2007-01-09
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