发明申请
- 专利标题： Semiconductor device and its manufacturing method
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US10979326申请日： 2004-11-03
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公开(公告)号： US20050121786A1公开(公告)日： 2005-06-09
- 发明人: Akira Furuya , Nobuyuki Ohtsuka , Shinichi Ogawa , Hiroshi Okamura
- 申请人： Akira Furuya , Nobuyuki Ohtsuka , Shinichi Ogawa , Hiroshi Okamura
- 申请人地址： JP Tsukuba-shi
- 专利权人： Semiconductor Leading Edge Technologies, Inc.
- 当前专利权人： Semiconductor Leading Edge Technologies, Inc.
- 当前专利权人地址： JP Tsukuba-shi
- 优先权： JP2003-376685 20031106
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/316 ; H01L21/4763 ; H01L21/768 ; H01L23/48 ; H01L23/522 ; H01L23/532 ; H01L29/40
摘要：
A semiconductor device comprises a semiconductor substrate and an interlayer interconnection structure provided on the semiconductor substrate. The interlayer interconnection structure includes a porous insulation film and a conductive part of a conductive material containing a metal as a major component. A volume occupation ratio of pores of a diameter greater than 0.6 nanometers is less than 30% in the porous insulation film.
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