发明申请
- 专利标题： Method for fabricating semiconductor device
- 专利标题（中）： 制造半导体器件的方法
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申请号： US10985883申请日： 2004-11-12
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公开(公告)号： US20050124113A1公开(公告)日： 2005-06-09
- 发明人: Kenji Yoneda
- 申请人： Kenji Yoneda
- 专利权人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 当前专利权人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 优先权： JP2003-382599 20031112
- 主分类号： H01L27/04
- IPC分类号： H01L27/04 ; H01L21/02 ; H01L21/314 ; H01L21/316 ; H01L21/321 ; H01L21/44 ; H01L21/82 ; H01L21/822 ; H01L21/8242 ; H01L27/108
摘要：
In a method for fabricating a semiconductor device, a first electrode made of polycrystalline silicon is subjected to first plasma containing oxygen, thereby forming a silicon oxide film in the surface of the first electrode. Then, the first electrode in which the silicon oxide film has been formed is subjected to second plasma containing nitrogen, thereby changing the silicon oxide film into a silicon oxynitride film. Subsequently, a capacitive insulating film made of a metal oxide is formed on the first electrode in which the silicon oxynitride film has been formed. Thereafter, the capacitive insulating film is subjected to third plasma containing oxygen, thereby supplying oxygen to the capacitive insulating film. Thereafter, thermal processing is performed in an oxidizing atmosphere on the capacitive insulating film to which oxygen has been supplied, and then a second electrode is formed on the capacitive insulating film.
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