Invention Application
- Patent Title: In situ application of etch back for improved deposition into high-aspect-ratio features
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Application No.: US11036632Application Date: 2005-01-13
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Publication No.: US20050124166A1Publication Date: 2005-06-09
- Inventor: Padmanabhan Krishnaraj , Pavel Ionov , Canfeng Lai , Michael Cox , Shamouil Shamouilian
- Applicant: Padmanabhan Krishnaraj , Pavel Ionov , Canfeng Lai , Michael Cox , Shamouil Shamouilian
- Applicant Address: US CA Santa Clara US CA Santa Clara
- Assignee: Applied Materials, Inc.,A Delaware corporation
- Current Assignee: Applied Materials, Inc.,A Delaware corporation
- Current Assignee Address: US CA Santa Clara US CA Santa Clara
- Main IPC: C23C16/04
- IPC: C23C16/04 ; C23C16/44 ; C23C16/455 ; C23C16/509 ; C30B25/10 ; H01L21/311 ; H01L21/316 ; H01L21/768
Abstract:
A continuous in situ process of deposition, etching, and deposition is provided for forming a film on a substrate using a plasma process. The etch-back may be performed without separate plasma activation of the etchant gas. The sequence of deposition, etching, and deposition permits features with high aspect ratios to be filled, while the continuity of the process results in improved uniformity.
Public/Granted literature
- US07399707B2 In situ application of etch back for improved deposition into high-aspect-ratio features Public/Granted day:2008-07-15
Information query
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