- 专利标题： Floating trap non-volatile semiconductor memory devices including high dielectric constant blocking insulating layers
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申请号： US11043485申请日： 2005-01-26
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公开(公告)号： US20050128816A1公开(公告)日： 2005-06-16
- 发明人: Chang-Hyun Lee , Jung-Dal Choi , Byoung-Woo Ye
- 申请人： Chang-Hyun Lee , Jung-Dal Choi , Byoung-Woo Ye
- 优先权： KR2001-0037421 20010628; KR2002-0005622 20020131
- 主分类号： H01L21/8247
- IPC分类号： H01L21/8247 ; G11C11/34 ; H01L21/28 ; H01L21/336 ; H01L21/8246 ; H01L27/115 ; H01L29/423 ; H01L29/51 ; H01L29/76 ; H01L29/78 ; H01L29/788 ; H01L29/792 ; H01L31/0328
摘要：
Floating trap non-volatile memory devices and methods are provided. The memory devices include a semiconductor substrate and an adjacent gate electrode. Between the substrate and the gate electrode may be a tunneling insulating layer having a first dielectric constant, a blocking insulating layer having a second dielectric constant that is greater than the first dielectric constant, and a charge storage layer.
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