- 专利标题： Reduced hydrogen sidewall spacer oxide
-
申请号： US10739973申请日： 2003-12-17
-
公开(公告)号： US20050133876A1公开(公告)日： 2005-06-23
- 发明人: Haowen Bu , Clinton Montgomery , Amitabh Jain
- 申请人： Haowen Bu , Clinton Montgomery , Amitabh Jain
- 主分类号： H01L21/314
- IPC分类号： H01L21/314 ; H01L21/316 ; H01L21/336 ; H01L21/338 ; H01L29/49 ; H01L29/76 ; H01L29/78 ; H01L31/062
摘要：
An embodiment of the invention is a method of making a semiconductor structure 10 where the spacer oxide layer 90 is formed by a hydrogen free precursor CVD process. Another embodiment of the invention is a semiconductor structure 10 having a spacer oxide layer 90 with a hydrogen content of less than 1%.
公开/授权文献
- US07306995B2 Reduced hydrogen sidewall spacer oxide 公开/授权日：2007-12-11
信息查询
IPC分类:
