发明申请
- 专利标题： Method for forming shallow trench in semiconductor device
- 专利标题（中）： 半导体器件中形成浅沟槽的方法
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申请号： US10751503申请日： 2004-01-06
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公开(公告)号： US20050148152A1公开(公告)日： 2005-07-07
- 发明人: Hsiu-Chun Lee , Tse-Yao Huang , Yi-Nan Chen
- 申请人： Hsiu-Chun Lee , Tse-Yao Huang , Yi-Nan Chen
- 申请人地址： TW Taoyuan
- 专利权人： Nanya Technology Corporation
- 当前专利权人： Nanya Technology Corporation
- 当前专利权人地址： TW Taoyuan
- 主分类号： H01L21/308
- IPC分类号： H01L21/308 ; H01L21/762 ; H01L21/76 ; H01L21/311
摘要：
Disclosed is a method for forming a shallow trench. The method of the present invention comprises steps of providing a substrate; forming a plurality of operation layers on the substrate; forming photoresist on the uppermost one of the operation layers to define a position to be etched; etching a portion of the operation layers at said position to form an opening; forming a spacing layer on the sidewall of the opening; and etching a portion of the substrate corresponding to the opening to form a shallow trench. By the etching method of the present invention, a striation phenomenon caused by the common mask etch is avoided.
公开/授权文献
- US06974741B2 Method for forming shallow trench in semiconductor device 公开/授权日：2005-12-13
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