发明申请
US20050161726A1 Capacitor of a semiconductor device, memory device including the same and method of munufacturing the same
审中-公开
半导体器件的电容器，包括其的存储器件及其制造方法
- 专利标题： Capacitor of a semiconductor device, memory device including the same and method of munufacturing the same
- 专利标题（中）： 半导体器件的电容器，包括其的存储器件及其制造方法
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申请号： US11042111申请日： 2005-01-26
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公开(公告)号： US20050161726A1公开(公告)日： 2005-07-28
- 发明人: Sang-min Shin , June-mo Koo , Suk-pil Kim , Choong-rae Cho
- 申请人： Sang-min Shin , June-mo Koo , Suk-pil Kim , Choong-rae Cho
- 优先权： KR10-2004-0004681 20040126
- 主分类号： H01L27/105
- IPC分类号： H01L27/105 ; H01L21/02 ; H01L21/8242 ; H01L21/8246 ; H01L29/76
摘要：
In a capacitor, a memory device including the capacitor, and a method of manufacturing the capacitor, the capacitor includes a lower electrode comprising a single layer of one selected from the group including a noble metal alloy and an oxide thereof, a dielectric film formed on the lower electrode, and an upper electrode formed on the dielectric film.