公开(公告)号：US20060001070A1

公开(公告)日：2006-01-05

申请号：US11120184

申请日：2005-05-03

申请人： Young-soo Park ,  Jung-hyun Lee ,  Choong-rae Cho ,  June-mo Koo ,  Suk-pil Kim ,  Sang-min Shin

发明人： Young-soo Park ,  Jung-hyun Lee ,  Choong-rae Cho ,  June-mo Koo ,  Suk-pil Kim ,  Sang-min Shin

IPC分类号： H01L21/00 ,  H01L27/108

CPC分类号： H01L28/91 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/65

摘要： A capacitor of a memory device, and a method of fabricating the same, includes a lower electrode electrically coupled to a doping region of a transistor structure, the lower electrode having a metal electrode and a metal oxide electrode, a ferroelectric layer covering and extending laterally along the lower electrode, and an upper electrode formed on the ferroelectric layer.

摘要翻译： 存储器件的电容器及其制造方法包括电耦合到晶体管结构的掺杂区域的下电极，下电极具有金属电极和金属氧化物电极，铁电层覆盖并横向延伸 沿着下电极和形成在铁电层上的上电极。

公开(公告)号：US20080038846A1

公开(公告)日：2008-02-14

申请号：US11878868

申请日：2007-07-27

申请人： Young-soo Park ,  Jung-hyun Lee ,  Choong-rae Cho ,  June-mo Koo ,  Suk-pil Kim ,  Sang-min Shin

发明人： Young-soo Park ,  Jung-hyun Lee ,  Choong-rae Cho ,  June-mo Koo ,  Suk-pil Kim ,  Sang-min Shin

IPC分类号： H01L21/8246

CPC分类号： H01L28/91 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/65

摘要： A capacitor of a memory device, and a method of fabricating the same, includes a lower electrode electrically coupled to a doping region of a transistor structure, the lower electrode having a metal electrode and a metal oxide electrode, a ferroelectric layer covering and extending laterally along the lower electrode, and an upper electrode formed on the ferroelectric layer.

摘要翻译： 存储器件的电容器及其制造方法包括电耦合到晶体管结构的掺杂区域的下电极，下电极具有金属电极和金属氧化物电极，铁电层覆盖并横向延伸 沿着下电极和形成在铁电层上的上电极。

公开(公告)号：US07250649B2

公开(公告)日：2007-07-31

申请号：US11120184

申请日：2005-05-03

申请人： Young-soo Park ,  Jung-hyun Lee ,  Choong-rae Cho ,  June-mo Koo ,  Suk-pil Kim ,  Sang-min Shin

发明人： Young-soo Park ,  Jung-hyun Lee ,  Choong-rae Cho ,  June-mo Koo ,  Suk-pil Kim ,  Sang-min Shin

IPC分类号： H01L29/76

CPC分类号： H01L28/91 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/65

摘要： A capacitor of a memory device, and a method of fabricating the same, includes a lower electrode electrically coupled to a doping region of a transistor structure, the lower electrode having a metal electrode and a metal oxide electrode, a ferroelectric layer covering and extending laterally along the lower electrode, and an upper electrode formed on the ferroelectric layer.

摘要翻译： 存储器件的电容器及其制造方法包括电耦合到晶体管结构的掺杂区域的下电极，下电极具有金属电极和金属氧化物电极，铁电层覆盖并横向延伸 沿着下电极和形成在铁电层上的上电极。

公开(公告)号：US20050161726A1

公开(公告)日：2005-07-28

申请号：US11042111

申请日：2005-01-26

申请人： Sang-min Shin ,  June-mo Koo ,  Suk-pil Kim ,  Choong-rae Cho

发明人： Sang-min Shin ,  June-mo Koo ,  Suk-pil Kim ,  Choong-rae Cho

IPC分类号： H01L27/105 ,  H01L21/02 ,  H01L21/8242 ,  H01L21/8246 ,  H01L29/76

CPC分类号： H01L28/65 ,  H01L27/10852 ,  H01L28/55

摘要： In a capacitor, a memory device including the capacitor, and a method of manufacturing the capacitor, the capacitor includes a lower electrode comprising a single layer of one selected from the group including a noble metal alloy and an oxide thereof, a dielectric film formed on the lower electrode, and an upper electrode formed on the dielectric film.

摘要翻译： 在电容器中，包括该电容器的存储器件以及制造该电容器的方法中，该电容器包括一个下电极，该电极包括从包括贵金属合金及其氧化物的组中选出的单层的单层，形成在 下电极和形成在电介质膜上的上电极。

公开(公告)号：US07910967B2

公开(公告)日：2011-03-22

申请号：US11515024

申请日：2006-09-05

申请人： Sang-min Shin ,  Young-soo Park ,  June-mo Koo ,  Byoung-jae Bae ,  I-hun Song ,  Suk-pil Kim

发明人： Sang-min Shin ,  Young-soo Park ,  June-mo Koo ,  Byoung-jae Bae ,  I-hun Song ,  Suk-pil Kim

IPC分类号： H01L21/00 ,  H01L31/112 ,  H01L23/48

CPC分类号： H01L27/11502 ,  H01L27/11507

摘要： A ferroelectric capacitor having a three-dimensional structure, a nonvolatile memory device having the same, and a method of fabricating the same are provided. The ferroelectric capacitor may include a trench-type lower electrode, at least one layer formed around the lower electrode, a ferroelectric layer (PZT layer) formed on the lower electrode and the at least one layer and an upper electrode formed on the ferroelectric layer. The at least one layer may be at least one insulating interlayer and the at least one layer may also be at least one diffusion barrier layer. The at least one layer may be formed of an insulating material excluding SiO2 or may have a perovskite crystal structure excluding Pb.

摘要翻译： 提供具有三维结构的铁电电容器，具有其的非易失性存储器件及其制造方法。 铁电电容器可以包括沟槽型下电极，形成在下电极周围的至少一层，形成在下电极和至少一层上的铁电层（PZT层）和形成在铁电层上的上电极。 所述至少一个层可以是至少一个绝缘夹层，并且所述至少一个层也可以是至少一个扩散阻挡层。 所述至少一层可以由除了SiO2之外的绝缘材料形成，或者可以具有不包括Pb的钙钛矿晶体结构。

公开(公告)号：US20060027847A1

公开(公告)日：2006-02-09

申请号：US11193415

申请日：2005-08-01

申请人： June-mo Koo ,  Young-soo Park ,  Sang-min Shin ,  Suk-pil Kim

发明人： June-mo Koo ,  Young-soo Park ,  Sang-min Shin ,  Suk-pil Kim

IPC分类号： H01L29/00 ,  H01L21/00

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/65

摘要： A ferroelectric capacitor comprises a first electrode comprising an alloy containing a first element and a second element of the periodic table of the elements, the first element being selected from the group consisting of Ir and Ru. A ferroelectric layer is disposed on the first electrode, wherein the ferroelectric layer comprises a ferroelectric material containing the second element. A second electrode is disposed on the ferroelectric layer. The ferroelectric capacitor can be provided as part of a memory cell of a ferroelectric memory.

公开(公告)号：US20060090702A1

公开(公告)日：2006-05-04

申请号：US11185689

申请日：2005-07-21

申请人： June-mo Koo ,  Young-soo Park ,  Sang-min Shin ,  Suk-pil Kim

发明人： June-mo Koo ,  Young-soo Park ,  Sang-min Shin ,  Suk-pil Kim

IPC分类号： C23C16/00

CPC分类号： C23C16/409 ,  C23C16/44

摘要： Embodiments are provided of a duplex chemical vapor deposition (CVD) system and pulsed processing method using the same. The duplex CVD system may include first and second process chambers, one or more reactive sources, and reactive source suppliers that correspond to the reactive sources, respectively. The reactive source suppliers may include a first conduit portion connected to the respective reactive sources, a second conduit portion having one terminal connected to the first conduit portion and the other terminal connected to the first process chamber, and a third conduit portion having one terminal connected to the first conduit portion and the other terminal connected to the second process chamber.

摘要翻译： 提供了双相化学气相沉积（CVD）系统和使用其的脉冲处理方法的实施例。 双相CVD系统可以分别包括对应于无源电源的第一和第二处理室，一个或多个无源电源和无源电源供应器。 反应源供应商可以包括连接到各个反应源的第一管道部分，具有连接到第一管道部分的一个端子和连接到第一处理室的另一个端子的第二管道部分，以及一个端子连接的第三管道部分 连接到第二处理室的第一管道部分和另一个端子。

公开(公告)号：US20070012974A1

公开(公告)日：2007-01-18

申请号：US11484582

申请日：2006-07-12

申请人： June-mo Koo ,  Bum-seok Seo ,  Young-soo Park ,  Jung-hyun Lee ,  Sang-min Shin ,  Suk-pil Kim

发明人： June-mo Koo ,  Bum-seok Seo ,  Young-soo Park ,  Jung-hyun Lee ,  Sang-min Shin ,  Suk-pil Kim

IPC分类号： H01L29/94

CPC分类号： H01L21/02197 ,  H01L21/0228 ,  H01L21/31691 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/65

摘要： Provided is a method for manufacturing a material layer capable of increasing the deposition rate of a noble metal layer on a ferroelectric layer, a method for manufacturing a ferroelectric capacitor using the same, a ferroelectric capacitor manufactured by the same method, and a semiconductor memory device having the ferroelectric capacitor and a manufacturing method thereof. According to a method for manufacturing the material layer, a ferroelectric layer is formed. The ferroelectric layer may be exposed to seed plasma, and a material layer including a source material of the seed plasma may be formed on a region of the ferroelectric layer exposed to the seed plasma.

摘要翻译： 提供一种能够提高强电介质层上的贵金属层的沉积速度的材料层的制造方法，使用该材料的铁电电容器的制造方法，通过相同的方法制造的铁电电容器以及半导体存储器件 具有铁电电容器及其制造方法。 根据材料层的制造方法，形成铁电体层。 可以将铁电层暴露于种子等离子体，并且可以在暴露于种子等离子体的铁电层的区域上形成包括种子等离子体的源材料的材料层。

公开(公告)号：US20060022236A1

公开(公告)日：2006-02-02

申请号：US10978795

申请日：2004-11-02

申请人： Sang-min Shin ,  Suk-pil Kim ,  Young-soo Park ,  Jung-hyun Lee ,  June-mo Koo

发明人： Sang-min Shin ,  Suk-pil Kim ,  Young-soo Park ,  Jung-hyun Lee ,  June-mo Koo

IPC分类号： H01L29/76

CPC分类号： H01L27/11502 ,  H01L28/55 ,  H01L28/65 ,  Y10T29/417

摘要： A ferroelectric capacitor comprises a first electrode comprising an alloy of Ir and Ru, a ferroelectric layer disposed on the first electrode, and a second electrode disposed on the ferroelectric layer. A ferroelectric memory comprises a substrate and a plurality of memory cells arranged on the substrate. Each memory cell comprises a first electrode comprising an alloy of Ir and Ru, a ferroelectric layer disposed on the first electrode, and a second electrode disposed on the ferroelectric layer.

公开(公告)号：US07745233B2

公开(公告)日：2010-06-29

申请号：US12289494

申请日：2008-10-29

申请人： Sang-min Shin ,  Suk-pil Kim ,  Young-soo Park ,  Jung-hyun Lee ,  June-mo Koo

发明人： Sang-min Shin ,  Suk-pil Kim ,  Young-soo Park ,  Jung-hyun Lee ,  June-mo Koo

IPC分类号： H01L21/00

CPC分类号： H01L27/11502 ,  H01L28/55 ,  H01L28/65 ,  Y10T29/417

摘要： A ferroelectric capacitor comprises a first electrode comprising an alloy of Ir and Ru, a ferroelectric layer disposed on the first electrode, and a second electrode disposed on the ferroelectric layer. A ferroelectric memory comprises a substrate and a plurality of memory cells arranged on the substrate. Each memory cell comprises a first electrode comprising an alloy of Ir and Ru, a ferroelectric layer disposed on the first electrode, and a second electrode disposed on the ferroelectric layer.

摘要翻译： 铁电电容器包括包含Ir和Ru的合金的第一电极，设置在第一电极上的铁电层和设置在铁电层上的第二电极。 铁电存储器包括衬底和布置在衬底上的多个存储单元。 每个存储单元包括包含Ir和Ru的合金的第一电极，设置在第一电极上的铁电层和设置在铁电层上的第二电极。