发明申请
- 专利标题： Magnetoresistive effect element, magnetic memory and magnetic head
- 专利标题（中）： 磁阻效应元件，磁记忆体和磁头
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申请号： US11069991申请日： 2005-03-03
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公开(公告)号： US20050170218A1公开(公告)日： 2005-08-04
- 发明人: Tatsuya Kishi , Yoshiaki Saito , Minoru Amano , Shigeki Takahashi , Katsuya Nishiyama
- 申请人： Tatsuya Kishi , Yoshiaki Saito , Minoru Amano , Shigeki Takahashi , Katsuya Nishiyama
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 优先权： JP2001-298849 20010928
- 主分类号： G01R33/09
- IPC分类号： G01R33/09 ; G11B5/39 ; G11C11/16 ; H01F10/16 ; H01F10/30 ; H01F10/32 ; H01L21/8246 ; H01L27/105 ; H01L27/22 ; H01L43/08 ; B32B1/00 ; G11B5/64
摘要：
A magnetoresistive effect element of a tunnel junction type includes a magnetic multi-layered film (1), ferromagnetic film (3) and intervening insulating film (2) such that a current flows between the magnetic multi-layered film and the ferromagnetic film, tunneling through the insulating film. The magnetic multi-layered film includes a first ferromagnetic layer, second ferromagnetic layer and anti-ferromagnetic layer inserted between the first and second ferromagnetic layers.
公开/授权文献
- US07245464B2 Magnetic memory having a ferromagnetic tunneling junction 公开/授权日：2007-07-17
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