发明申请
- 专利标题: Analog capacitor and method of fabricating the same
- 专利标题(中): 模拟电容器及其制造方法
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申请号: US11052045申请日: 2005-02-08
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公开(公告)号: US20050173778A1公开(公告)日: 2005-08-11
- 发明人: Seok-Jun Won , Yong-Kuk Jeong
- 申请人: Seok-Jun Won , Yong-Kuk Jeong
- 优先权: JP2004-8495 20040209
- 主分类号: H01L27/04
- IPC分类号: H01L27/04 ; H01L21/02 ; H01L21/8242 ; H01L27/108 ; H01L29/76 ; H01L31/119
摘要:
Analog capacitors, and methods of fabricating the same, include a lower electrode having a lower conductive layer, a capacitor dielectric layer on the lower conductive layer, and an upper electrode on the capacitor dielectric layer to be opposite to the lower electrode, wherein the upper electrode includes at least an upper conductive layer in contact with the capacitor dielectric layer, wherein the upper conductive layer has a resistivity higher than that of the lower conductive layer.
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