发明申请
US20050202587A1 Vertical field-effect transistor, method of manufacturing the same, and display device having the same
有权
垂直场效应晶体管及其制造方法以及具有该晶体管的显示装置
- 专利标题： Vertical field-effect transistor, method of manufacturing the same, and display device having the same
- 专利标题（中）： 垂直场效应晶体管及其制造方法以及具有该晶体管的显示装置
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申请号： US11073867申请日： 2005-03-08
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公开(公告)号： US20050202587A1公开(公告)日： 2005-09-15
- 发明人: Michael Redecker , Joerg Fischer , Arthur Mathea
- 申请人： Michael Redecker , Joerg Fischer , Arthur Mathea
- 优先权： EP04090102.7 20040311; KR10-2004-0052917 20040708
- 主分类号： H01L51/50
- IPC分类号： H01L51/50 ; G09F9/30 ; H01L21/00 ; H01L21/28 ; H01L21/335 ; H01L21/8238 ; H01L21/84 ; H01L29/06 ; H01L29/423 ; H01L29/49 ; H01L29/772 ; H01L29/786 ; H01L29/80 ; H01L51/00 ; H01L51/05 ; H01L51/40 ; H05B33/14
摘要：
Provided are a vertical field-effect transistor, a method of manufacturing the same, and a display device having the same. The method is highly reproducible and can be used to manufacture a vertical organic field-effect transistor at a low cost. In addition, the method does not require photolithography and a shadow mask. In the vertical field-effect transistor, a source electrode is formed on a substrate, and an insulating layer and discontinuous gate electrodes are formed. Then, a charge carrier block layer, an organic semiconductor material, and a drain electrode are formed. The gate electrodes are formed using nanoparticles.