- 专利标题： Magnetic memory device and method of manufacturing the same
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申请号： US11135337申请日： 2005-05-24
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公开(公告)号： US20050208682A1公开(公告)日： 2005-09-22
- 发明人: Kentaro Nakajima , Keiji Hosotani
- 申请人： Kentaro Nakajima , Keiji Hosotani
- 优先权： JP2002-346036 20021128; JP2003-381506 20031111
- 主分类号： H01L27/105
- IPC分类号： H01L27/105 ; H01L21/00 ; H01L21/8246 ; H01L27/22 ; H01L29/76 ; H01L31/062 ; H01L43/08 ; H01L43/12
摘要：
A magnetic memory device includes a first interconnection which runs in a first direction, a second interconnection which runs in a second direction different from the first direction, a magnetoresistive element which is arranged at the intersection of and between the first and second interconnections, and a metal layer which is connected to the magnetoresistive element and has a side surface that partially coincides with a side surface of the magnetoresistive element.
公开/授权文献
- US07405087B2 Magnetic memory device and method of manufacturing the same 公开/授权日：2008-07-29
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