公开(公告)号：US06803619B2

公开(公告)日：2004-10-12

申请号：US10615920

申请日：2003-07-10

申请人： Keiji Hosotani ,  Kentaro Nakajima

发明人： Keiji Hosotani ,  Kentaro Nakajima

IPC分类号： H01L2976

CPC分类号： H01L27/228 ,  B82Y10/00

摘要： A magnetic memory device capable of achieving high reliability and superior operation characteristics of tunneling magneto-resistive (TMR) elements is provided. This magnetic memory device includes a semiconductor substrate, a transistor which is formed above the semiconductor substrate, and a TMR element which is formed on or above an interlayer dielectric film that covers the transistor of the substrate. The device also includes a first wiring line which is buried in the interlayer dielectric film and connected to a source/drain diffusion layer of the transistor, a second wiring line which is buried under the TMR element while overlying the first wiring line within the interlayer dielectric film and which is used to apply a current-created magnetic field to the TMR element during writing, and a third wiring line connected to an upper surface of the TMR element and provided to cross the second wiring line. The third wiring line is for applying a current magnetic field to the TMR element during writing and also for causing a cell current to flow during reading. The second wiring line is formed by patterning techniques so that its both edges are placed outside of a pattern of the TMR element.

摘要翻译： 提供了能够实现隧道磁阻（TMR）元件的高可靠性和优异的操作特性的磁存储器件。 该磁存储器件包括半导体衬底，形成在半导体衬底上方的晶体管，以及形成在覆盖衬底晶体管的层间绝缘膜上或之上的TMR元件。 该器件还包括埋在层间电介质膜中并连接到晶体管的源极/漏极扩散层的第一布线，埋在TMR元件下面的第二布线，同时覆盖层间电介质中的第一布线 并且其用于在写入期间向TMR元件施加电流产生的磁场，以及第三布线，连接到TMR元件的上表面并且被提供以跨越第二布线。 第三布线用于在写入期间向TMR元件施加电流磁场，并且还用于在读取期间使单元电流流动。 第二布线通过图案化技术形成，使得它的两个边缘被放置在TMR元件的图案之外。

公开(公告)号：US07405087B2

公开(公告)日：2008-07-29

申请号：US11135337

申请日：2005-05-24

申请人： Kentaro Nakajima ,  Keiji Hosotani

发明人： Kentaro Nakajima ,  Keiji Hosotani

IPC分类号： H01L21/00

CPC分类号： H01L43/12 ,  B82Y10/00 ,  H01L27/222 ,  H01L27/228

摘要： A magnetic memory device includes a first interconnection which runs in a first direction, a second interconnection which runs in a second direction different from the first direction, a magnetoresistive element which is arranged at the intersection of and between the first and second interconnections, and a metal layer which is connected to the magnetoresistive element and has a side surface that partially coincides with a side surface of the magnetoresistive element.

摘要翻译： 磁存储器件包括沿第一方向延伸的第一互连，沿与第一方向不同的第二方向延伸的第二互连;布置在第一和第二互连之间的交叉点处的磁阻元件，以及 金属层，其连接到磁阻元件并具有与磁阻元件的侧表面部分重合的侧表面。

公开(公告)号：US06884633B2

公开(公告)日：2005-04-26

申请号：US10879273

申请日：2004-06-30

申请人： Keiji Hosotani ,  Kentaro Nakajima

发明人： Keiji Hosotani ,  Kentaro Nakajima

IPC分类号： G11C11/14 ,  G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L43/08 ,  H01L43/12 ,  H01L21/00 ,  G11C11/00 ,  H01L43/00

CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/15 ,  G11C11/16 ,  H01L27/224

摘要： A semiconductor memory device includes a first wiring extending in a first direction, a second wiring extending in a second direction differing from the first direction, and a magneto resistive element arranged between the first and second wirings and including a first portion and a second portion, the second portion being in contact with the second wiring and extending along the second wiring to reach an outside region positioned outside the first portion.

摘要翻译： 半导体存储器件包括沿第一方向延伸的第一布线，沿与第一方向不同的第二方向延伸的第二布线和布置在第一布线和第二布线之间并包括第一部分和第二部分的磁阻元件， 所述第二部分与所述第二布线接触并且沿着所述第二布线延伸以到达位于所述第一部分外侧的外部区域。

公开(公告)号：US06919595B2

公开(公告)日：2005-07-19

申请号：US10951588

申请日：2004-09-29

申请人： Keiji Hosotani ,  Kentaro Nakajima

发明人： Keiji Hosotani ,  Kentaro Nakajima

IPC分类号： G11C11/15 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  H01L29/76

CPC分类号： H01L27/228 ,  B82Y10/00

摘要： A magnetic memory device capable of achieving high reliability and superior operation characteristics of tunneling magneto-resistive (TMR) elements is provided. This magnetic memory device includes a semiconductor substrate, a transistor which is formed above the semiconductor substrate, and a TMR element which is formed on or above an interlayer dielectric film that covers the transistor of the substrate. The device also includes a first wiring line which is buried in the interlayer dielectric film and connected to a source/drain diffusion layer of the transistor, a second wiring line which is buried under the TMR element while overlying the first wiring line within the interlayer dielectric film and which is used to apply a current-created magnetic field to the TMR element during writing, and a third wiring line connected to an upper surface of the TMR element and provided to cross the second wiring line. The third wiring line is for applying a current magnetic field to the TMR element during writing and also for causing a cell current to flow during reading. The second wiring line is formed by patterning techniques so that its both edges are placed outside of a pattern of the TMR element.

公开(公告)号：US20050035385A1

公开(公告)日：2005-02-17

申请号：US10951588

申请日：2004-09-29

申请人： Keiji Hosotani ,  Kentaro Nakajima

发明人： Keiji Hosotani ,  Kentaro Nakajima

IPC分类号： G11C11/15 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  G11C11/00

CPC分类号： H01L27/228 ,  B82Y10/00

摘要： A magnetic memory device capable of achieving high reliability and superior operation characteristics of tunneling magneto-resistive (TMR) elements is provided. This magnetic memory device includes a semiconductor substrate, a transistor which is formed above the semiconductor substrate, and a TMR element which is formed on or above an interlayer dielectric film that covers the transistor of the substrate. The device also includes a first wiring line which is buried in the interlayer dielectric film and connected to a source/drain diffusion layer of the transistor, a second wiring line which is buried under the TMR element while overlying the first wiring line within the interlayer dielectric film and which is used to apply a current-created magnetic field to the TMR element during writing, and a third wiring line connected to an upper surface of the TMR element and provided to cross the second wiring line. The third wiring line is for applying a current magnetic field to the TMR element during writing and also for causing a cell current to flow during reading. The second wiring line is formed by patterning techniques so that its both edges are placed outside of a pattern of the TMR element.

摘要翻译： 提供了能够实现隧道磁阻（TMR）元件的高可靠性和优异的操作特性的磁存储器件。 该磁存储器件包括半导体衬底，形成在半导体衬底上方的晶体管，以及形成在覆盖衬底晶体管的层间绝缘膜上或之上的TMR元件。 该器件还包括埋在层间电介质膜中并连接到晶体管的源极/漏极扩散层的第一布线，埋在TMR元件下面的第二布线，同时覆盖层间电介质中的第一布线 并且其用于在写入期间向TMR元件施加电流产生的磁场，以及第三布线，连接到TMR元件的上表面并且被提供以跨越第二布线。 第三布线用于在写入期间向TMR元件施加电流磁场，并且还用于在读取期间使单元电流流动。 第二布线通过图案化技术形成，使得它的两个边缘被放置在TMR元件的图案之外。

公开(公告)号：US06828641B2

公开(公告)日：2004-12-07

申请号：US10656283

申请日：2003-09-08

申请人： Keiji Hosotani ,  Kentaro Nakajima

发明人： Keiji Hosotani ,  Kentaro Nakajima

IPC分类号： H01L4300

CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/15 ,  G11C11/16 ,  H01L27/224

摘要： A semiconductor memory device includes a first wiring extending in a first direction, a second wiring extending in a second direction differing from the first direction, and a magneto resistive element arranged between the first and second wirings and comprising a first portion and a second portion, the second portion being in contact with the second wiring and extending along the second wiring to reach an outside region positioned outside the first portion.

摘要翻译： 半导体存储器件包括沿第一方向延伸的第一布线，沿与第一方向不同的第二方向延伸的第二布线和布置在第一和第二布线之间并包括第一部分和第二部分的磁阻元件， 所述第二部分与所述第二布线接触并且沿着所述第二布线延伸以到达位于所述第一部分外侧的外部区域。

公开(公告)号：US06653703B2

公开(公告)日：2003-11-25

申请号：US10125374

申请日：2002-04-19

申请人： Keiji Hosotani ,  Kentaro Nakajima

发明人： Keiji Hosotani ,  Kentaro Nakajima

IPC分类号： H01L4300

CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/15 ,  G11C11/16 ,  H01L27/224

摘要： A semiconductor memory device includes a first wiring extending in a first direction, a second wiring extending in a second direction differing from the first direction, and a magneto resistive element arranged between the first and second wirings and including a first portion and a second portion, the second portion being in contact with the second wiring and extending along the second wiring to reach an outside region positioned outside the first portion.

摘要翻译： 半导体存储器件包括沿第一方向延伸的第一布线，沿与第一方向不同的第二方向延伸的第二布线和布置在第一布线和第二布线之间并包括第一部分和第二部分的磁阻元件， 所述第二部分与所述第二布线接触并且沿着所述第二布线延伸以到达位于所述第一部分外侧的外部区域。

公开(公告)号：US20050208682A1

公开(公告)日：2005-09-22

申请号：US11135337

申请日：2005-05-24

申请人： Kentaro Nakajima ,  Keiji Hosotani

发明人： Kentaro Nakajima ,  Keiji Hosotani

IPC分类号： H01L27/105 ,  H01L21/00 ,  H01L21/8246 ,  H01L27/22 ,  H01L29/76 ,  H01L31/062 ,  H01L43/08 ,  H01L43/12

CPC分类号： H01L43/12 ,  B82Y10/00 ,  H01L27/222 ,  H01L27/228

摘要： A magnetic memory device includes a first interconnection which runs in a first direction, a second interconnection which runs in a second direction different from the first direction, a magnetoresistive element which is arranged at the intersection of and between the first and second interconnections, and a metal layer which is connected to the magnetoresistive element and has a side surface that partially coincides with a side surface of the magnetoresistive element.

公开(公告)号：US06914284B2

公开(公告)日：2005-07-05

申请号：US10722514

申请日：2003-11-28

申请人： Kentaro Nakajima ,  Keiji Hosotani

发明人： Kentaro Nakajima ,  Keiji Hosotani

IPC分类号： H01L27/105 ,  H01L21/00 ,  H01L21/8246 ,  H01L27/22 ,  H01L29/76 ,  H01L31/062 ,  H01L43/08 ,  H01L43/12

CPC分类号： H01L43/12 ,  B82Y10/00 ,  H01L27/222 ,  H01L27/228

摘要： A magnetic memory device includes a first interconnection which runs in a first direction, a second interconnection which runs in a second direction different from the first direction, a magnetoresistive element which is arranged at the intersection of and between the first and second interconnections, and a metal layer which is connected to the magnetoresistive element and has a side surface that partially coincides with a side surface of the magnetoresistive element.

摘要翻译： 磁存储器件包括沿第一方向延伸的第一互连，沿与第一方向不同的第二方向延伸的第二互连;布置在第一和第二互连之间的交叉点处的磁阻元件，以及 金属层，其连接到磁阻元件并具有与磁阻元件的侧表面部分重合的侧表面。

公开(公告)号：US07291506B2

公开(公告)日：2007-11-06

申请号：US11171323

申请日：2005-07-01

申请人： Kentaro Nakajima ,  Minoru Amano ,  Tomomasa Ueda ,  Shigeki Takahashi

发明人： Kentaro Nakajima ,  Minoru Amano ,  Tomomasa Ueda ,  Shigeki Takahashi

IPC分类号： H01L21/00

CPC分类号： C23F4/00 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/3254 ,  H01F41/308 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

摘要： A method of manufacturing a magnetic memory device includes forming an insulation layer on a substrate, forming a lower electrode on the insulation layer, forming a magneto-resistive film on an upper surface of the lower electrode, the magneto-resistive film including an insulation barrier layer and a plurality of magnetic films stacked on both sides of the insulation barrier layer, stacking a mask layer on the magneto-resistive film, performing ion etching on the magneto-resistive film, using the mask layer as a mask, thereby forming a magneto-resistive element, forming an insulation film on upper surfaces of the mask, the magneto-resistive element and the lower electrode, and etching the insulation film with an ion beam such that a side surface of the magneto-resistive element is exposed.

摘要翻译： 一种制造磁存储器件的方法包括在衬底上形成绝缘层，在绝缘层上形成下电极，在下电极的上表面上形成磁阻膜，该磁阻膜包括绝缘屏障 层和层叠在绝缘阻挡层的两侧的多个磁性膜，使用掩模层作为掩模将掩模层堆叠在磁阻膜上，对磁阻膜进行离子蚀刻，从而形成磁 电阻元件，在掩模的上表面，磁阻元件和下电极上形成绝缘膜，并用离子束蚀刻绝缘膜，使得磁阻元件的侧表面露出。