发明申请
- 专利标题: Semiconductor memory device and method of manufacturing the same
- 专利标题(中): 半导体存储器件及其制造方法
-
申请号: US11088947申请日: 2005-03-25
-
公开(公告)号: US20050212036A1公开(公告)日: 2005-09-29
- 发明人: Masayuki Tanaka , Yoshio Ozawa , Hirokazu Ishida , Katsuaki Natori , Seiji Inumiya
- 申请人: Masayuki Tanaka , Yoshio Ozawa , Hirokazu Ishida , Katsuaki Natori , Seiji Inumiya
- 优先权: JP2004-092535 20040326; JP2005-027847 20050203
- 主分类号: H01L21/8247
- IPC分类号: H01L21/8247 ; G11C16/04 ; H01L21/28 ; H01L27/115 ; H01L29/423 ; H01L29/51 ; H01L29/76 ; H01L29/788 ; H01L29/792
摘要:
A semiconductor memory device includes a semiconductor substrate, an isolation insulation film filled in a plurality of trenches formed in the semiconductor substrate to define a plurality of element formation regions, a floating gate provided on each of the element formation regions through a first gate insulation film, a control gate provided on the floating gate through a second gate insulation film, and source/drain regions provided in the semiconductor substrate, wherein a mutual diffusion layer is provided at least at an interface between the second gate insulation film and the control gate.