摘要:
A semiconductor memory device includes a semiconductor substrate, an isolation insulation film filled in a plurality of trenches formed in the semiconductor substrate to define a plurality of element formation regions, a floating gate of polysilicon provided on each of the element formation regions through a first insulation film, a second insulation film, provided on the floating gate, containing a metal element, a control gate of polysilicon, provided on the second insulation film, and source/drain regions provided in the semiconductor substrate, both a polysilicon conductive layer containing a metal element and a mutual diffusion layer composed of a silicate layer of a mixed oxide material composed of a silicon element contained in the floating gate and the control gate and a metal element contained in the second insulation film are provided on a surface of each of the floating gate and the control gate, respectively.
摘要:
A semiconductor memory device includes a semiconductor substrate, an isolation insulation film filled in a plurality of trenches formed in the semiconductor substrate to define a plurality of element formation regions, a floating gate of polysilicon provided on each of the element formation regions through a first insulation film, a second insulation film, provided on the floating gate, containing a metal element, a control gate of polysilicon, provided on the second insulation film, and source/drain regions provided in the semiconductor substrate, both a polysilicon conductive layer containing a metal element and a mutual diffusion layer composed of a silicate layer of a mixed oxide material composed of a silicon element contained in the floating gate and the control gate and a metal element contained in the second insulation film are provided on a surface of each of the floating gate and the control gate, respectively.
摘要:
A semiconductor memory device includes a semiconductor substrate, an isolation insulation film filled in a plurality of trenches formed in the semiconductor substrate to define a plurality of element formation regions, a floating gate provided on each of the element formation regions through a first gate insulation film, a control gate provided on the floating gate through a second gate insulation film, and source/drain regions provided in the semiconductor substrate, wherein a mutual diffusion layer is provided at least at an interface between the second gate insulation film and the control gate.
摘要:
A semiconductor memory device includes a semiconductor substrate, an isolation insulation film filled in a plurality of trenches formed in the semiconductor substrate to define a plurality of element formation regions, a floating gate of polysilicon provided on each of the element formation regions through a first insulation film, a second insulation film, provided on the floating gate, containing a metal element, a control gate of polysilicon, provided on the second insulation film, and source/drain regions provided in the semiconductor substrate, both a polysilicon conductive layer containing a metal element and a mutual diffusion layer composed of a silicate layer of a mixed oxide material composed of a silicon element contained in the floating gate and the control gate and a metal element contained in the second insulation film are provided on a surface of each of the floating gate and the control gate, respectively.
摘要:
A semiconductor memory device includes a semiconductor substrate, an isolation insulation film filled in a plurality of trenches formed in the semiconductor substrate to define a plurality of element formation regions, a floating gate of polysilicon provided on each of the element formation regions through a first insulation film, a second insulation film, provided on the floating gate, containing a metal element, a control gate of polysilicon, provided on the second insulation film, and source/drain regions provided in the semiconductor substrate, both a polysilicon conductive layer containing a metal element and a mutual diffusion layer composed of a silicate layer of a mixed oxide material composed of a silicon element contained in the floating gate and the control gate and a metal element contained in the second insulation film are provided on a surface of each of the floating gate and the control gate, respectively.
摘要:
A semiconductor memory device includes a semiconductor substrate, an isolation insulation film filled in a plurality of trenches formed in the semiconductor substrate to define a plurality of element formation regions, a floating gate provided on each of the element formation regions through a first gate insulation film, a control gate provided on the floating gate through a second gate insulation film, and source/drain regions provided in the semiconductor substrate, wherein a mutual diffusion layer is provided at least at an interface between the second gate insulation film and the control gate.
摘要:
A method of forming an insulating film includes forming a base film comprising a material whose surface is oxidized by being exposed to an oxidant. A source gas containing a metal material and a first oxidant having a first oxidation force are alternately supplied to form a first insulating film on the base film. A source gas containing a metal material and a second oxidant having a second oxidation force stronger than the first oxidation force are alternately supplied to form a second insulating film on the first insulating film.
摘要:
A method of forming an insulating film includes forming a base film comprising a material whose surface is oxidized by being exposed to an oxidant. A source gas containing a metal material and a first oxidant having a first oxidation force are alternately supplied to form a first insulating film on the base film. A source gas containing a metal material and a second oxidant having a second oxidation force stronger than the first oxidation force are alternately supplied to form a second insulating film on the first insulating film.
摘要:
There is disclosed a semiconductor device including a plurality of memory cell transistors, each memory cell transistor including a floating gate electrode isolated from each other via an isolation insulating film every memory cell transistor, an inter-electrode insulating film comprising a HfxAl1-xOy film (0.8≦x≦0.95) formed on the floating gate electrode, and a control gate electrode formed on the inter-electrode insulating film, wherein the memory cell transistors are arrayed to form a memory cell array.
摘要翻译:公开了一种包括多个存储单元晶体管的半导体器件,每个存储单元晶体管包括通过每个存储单元晶体管的隔离绝缘膜彼此隔离的浮栅,包括Hf x Al 1-x O y膜的电极间绝缘膜( 形成在浮置栅电极上的栅极电极,以及形成在电极间绝缘膜上的控制栅电极,其中存储单元晶体管被排列以形成存储单元阵列。
摘要:
A semiconductor device includes semiconductor substrate, isolation insulating film, nonvolatile memory cells, each of the cells including tunnel insulating film, FG electrode, CG electrode, interelectrode insulating film between the CG and FG electrodes and including a first insulating film and a second insulating film on the first insulating film and having higher permittivity than the first insulating film, the interelectrode insulating film being provided on a side wall of the floating gate electrode in a cross-section view of a channel width direction of the cell, thickness of the interelectrode insulating film increasing from an upper portion of the side wall toward a lower portion of the side wall, thickness of the second insulating film on an upper corner of the FG electrode being thicker than thickness of the second insulating film on the other portions of the side wall in the cross-section view of the channel width direction.