发明申请
- 专利标题： Light emitting device using nitride semiconductor and fabrication method of the same
- 专利标题（中）： 使用氮化物半导体的发光器件及其制造方法
-
申请号： US10517819申请日： 2004-06-21
-
公开(公告)号： US20050236631A1公开(公告)日： 2005-10-27
- 发明人: Suk Lee
- 申请人： Suk Lee
- 优先权： KR10-2003-0041409 20030625
- 国际申请： PCT/KR04/01480 WO 20040621
- 主分类号： H01L33/06
- IPC分类号： H01L33/06 ; H01L33/12 ; H01L33/32 ; H01L27/15
摘要：
A nitride based 3-5 group compound semiconductor light emitting device comprising: a substrate; a buffer layer formed above the substrate; a first In-doped GaN layer formed above the buffer layer; an InxGa1-xN/InyGa1-yN super lattice structure layer formed above the first In-doped GaN layer; a first electrode contact layer formed above the InxGa1-xN/InyGa1-yN super lattice structure layer; an active layer formed above the first electrode contact layer and functioning to emit light; a second In-doped GaN layer; a GaN layer formed above the second In-doped GaN layer; and a second electrode contact layer formed above the GaN layer. The present invention can reduce crystal defects of the nitride based 3-5 group compound semiconductor light emitting device and improve the crystallinity of a GaN GaN based single crystal layer in order to improve the performance of the light emitting device and ensure the reliability thereof.
公开/授权文献
信息查询
IPC分类:
