发明申请
- 专利标题： Heteroepitaxial growth method for gallium nitride
- 专利标题（中）： 氮化镓的异质外延生长方法
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申请号： US11077129申请日： 2005-03-11
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公开(公告)号： US20050239271A1公开(公告)日： 2005-10-27
- 发明人: Shingo Sakakibara , Yoku Inoue , Hidenori Mimura
- 申请人： Shingo Sakakibara , Yoku Inoue , Hidenori Mimura
- 专利权人： Yamaha Corporation
- 当前专利权人： Yamaha Corporation
- 优先权： JP2004-071593 20040312
- 主分类号： C23C16/02
- IPC分类号： C23C16/02 ; C23C16/34 ; C30B1/00 ; C30B25/02 ; C30B25/18 ; H01L21/20 ; H01L21/205 ; H01L21/36 ; H01L21/4763 ; H01L33/32 ; H01L33/34
摘要：
A heteroepitaxial growth method for gallium nitride yields gallium nitride which contains good quality fine crystals and has excellent optical properties, on a quartz substrate or a silicon substrate. The method comprises a step A of nitriding the surface of the substrate and a step B of depositing or vapor depositing at least one atom layer of gallium.
公开/授权文献
- US07604697B2 Heteroepitaxial growth method for gallium nitride 公开/授权日：2009-10-20