摘要:
A heteroepitaxial growth method for gallium nitride yields gallium nitride which contains good quality fine crystals and has excellent optical properties, on a quartz substrate or a silicon substrate. The method comprises a step A of nitriding the surface of the substrate and a step B of depositing or vapor depositing at least one atom layer of gallium.
摘要:
A heteroepitaxial growth method for gallium nitride yields gallium nitride which contains good quality fine crystals and has excellent optical properties, on a quartz substrate or a silicon substrate. The method comprises a step A of nitriding the surface of the substrate, and a step B of depositing or vapor depositing at least one atom layer of gallium.
摘要:
Carbon nanotubes are grown by supplying raw material gas 30 comprising a carbon compound to be a raw material of the carbon nanotubes into the inside of a reaction vessel tube 14 in which a catalyst 26 to grow the carbon nanotubes is charged. At this time, halogen-containing material gas 32 to reduce the amount of a carbon product such as amorphous carbon produced besides carbon nanotubes that deposits on the surface of catalyst particles 44 due to supply of the raw material gas 30 is further supplied into the inside of the reaction vessel tube 14. Thereby, it is possible to produce elongated carbon nanotubes.
摘要:
A chemical vapor deposition (CVD) device is equipped with a reaction vessel tube and a small vessel substrate in an electric furnace and with a heater and a thermocouple at the periphery thereof. A gas supply portion is connected to one of the reaction vessel tubes, and a pressure adjusting valve and an exhaust portion are connected to the other of the reaction vessel tubes, controlled by a control section such that the exhaust portion vacuum-exhausts the reaction vessel tube interior, the heater sublimates the small vessel substrate interior by rising temperature of catalyst iron chloride, and the gas supply portion bleeds an acetylene gas into the reaction vessel tube. As a result, iron chloride and the acetylene gas vapor-phase-react, a silicon oxide surface layer is formed to form growth nucleus of carbon nanotubes, and carbon nanotubes are grown so as to be oriented vertically.
摘要:
Carbon nanotubes are grown by supplying raw material gas 30 comprising a carbon compound to be a raw material of the carbon nanotubes into the inside of a reaction vessel tube 14 in which a catalyst 26 to grow the carbon nanotubes is charged. At this time, halogen-containing material gas 32 to reduce the amount of a carbon product such as amorphous carbon produced besides carbon nanotubes that deposits on the surface of catalyst particles 44 due to supply of the raw material gas 30 is further supplied into the inside of the reaction vessel tube 14. Thereby, it is possible to produce elongated carbon nanotubes.
摘要:
A chemical vapor deposition (CVD) device is equipped with a reaction vessel tube and a small vessel substrate in an electric furnace and with a heater and a thermocouple at the periphery thereof. A gas supply portion is connected to one of the reaction vessel tubes, and a pressure adjusting valve and an exhaust portion are connected to the other of the reaction vessel tubes, controlled by a control section such that the exhaust portion vacuum-exhausts the reaction vessel tube interior, the heater sublimates the small vessel substrate interior by rising temperature of catalyst iron chloride, and the gas supply portion bleeds an acetylene gas into the reaction vessel tube. As a result, iron chloride and the acetylene gas vapor-phase-react, a silicon oxide surface layer is formed to form growth nucleus of cabon nanotubes, and carbon nanotubes are grown so as to be oriented vertically.