Invention Application
- Patent Title: Semiconductor device and method of forming a semiconductor device
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Application No.: US11174606Application Date: 2005-07-06
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Publication No.: US20050242369A1Publication Date: 2005-11-03
- Inventor: Florin Udrea , Gehan Amaratunga
- Applicant: Florin Udrea , Gehan Amaratunga
- Applicant Address: GB Cambridge
- Assignee: CAMBRIDGE SEMICONDUCTOR LIMITED
- Current Assignee: CAMBRIDGE SEMICONDUCTOR LIMITED
- Current Assignee Address: GB Cambridge
- Main IPC: H01L21/329
- IPC: H01L21/329 ; H01L21/331 ; H01L21/336 ; H01L21/76 ; H01L21/762 ; H01L21/764 ; H01L21/8234 ; H01L27/08 ; H01L27/088 ; H01L29/06 ; H01L29/08 ; H01L29/12 ; H01L29/20 ; H01L29/24 ; H01L29/32 ; H01L29/423 ; H01L29/739 ; H01L29/78 ; H01L29/786 ; H01L29/861
Abstract:
A power semiconductor device has an active region that includes a drift region. At least a portion of the drift region is provided in a membrane which has opposed top and bottom surfaces. In one embodiment, the top surface of the membrane has electrical terminals connected directly or indirectly thereto to allow a voltage to be applied laterally across the drift region. In another embodiment, at least one electrical terminal is connected directly or indirectly to the top surface and at least one electrical terminal is connected directly or indirectly to the bottom surface to allow a voltage to be applied vertically across the drift region. In each of these embodiments, the bottom surface of the membrane does not have a semiconductor substrate positioned adjacent thereto.
Public/Granted literature
- US07235439B2 Method of forming a MOS-controllable power semiconductor device for use in an integrated circuit Public/Granted day:2007-06-26
Information query
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