公开(公告)号：US09406985B2

公开(公告)日：2016-08-02

申请号：US12319968

申请日：2009-01-13

申请人： Gehan Amaratunga ,  Haolan Wang ,  Husnu Emrah Unalan ,  Markku Antti Kyosti Rouvala ,  Di Wei

发明人： Gehan Amaratunga ,  Haolan Wang ,  Husnu Emrah Unalan ,  Markku Antti Kyosti Rouvala ,  Di Wei

IPC分类号： H01M4/02 ,  H01M6/16 ,  H01M4/583 ,  H01G9/04 ,  H01G9/042 ,  H01G9/045 ,  H01G9/145 ,  H01M12/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B31/02 ,  H01G11/26 ,  H01G11/36 ,  H01G11/62 ,  H01G11/86 ,  H01M4/04 ,  H01M4/133 ,  H01M4/1393 ,  H01M4/66 ,  H01M10/0525 ,  H01M4/88 ,  H01M2/16

CPC分类号： H01M12/005 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  H01G11/26 ,  H01G11/36 ,  H01G11/62 ,  H01G11/86 ,  H01M2/1653 ,  H01M4/0404 ,  H01M4/133 ,  H01M4/1393 ,  H01M4/661 ,  H01M4/663 ,  H01M4/8842 ,  H01M10/0525 ,  Y02E60/13 ,  Y02P70/54

摘要： An energy storage device structure comprises a first electrode layer, an electrolyte layer and a second electrode layer. At least one of the electrode layers comprise a metallic base layer, a layer of carbon nanotubes grown on the base layer and a layer of carbon nanoparticles disposed on the carbon nanotube layer, the carbon nanoparticle layer being arranged to face the electrolyte layer. The structure has much larger width and length than thickness, so it is rolled up or folded and then hermetically sealed to form an energy storage unit. The layer of carbon nanotubes is grown on the metallic base layer by a chemical vapor deposition process at a temperature no higher than 550° C. The carbon nanotubes in the carbon nanotube layer are at least partially aligned in a direction that is perpendicular to the surface of the metallic base layer.

摘要翻译： 储能装置结构包括第一电极层，电解质层和第二电极层。 至少一个电极层包括金属基底层，在基底层上生长的碳纳米管层和设置在碳纳米管层上的碳纳米管层，碳纳米颗粒层被布置为面向电解质层。 该结构具有比厚度大得多的宽度和长度，因此它被卷起或折叠，然后气密密封以形成储能单元。 碳纳米管层通过化学气相沉积工艺在不高于550℃的温度下在金属基底层上生长。碳纳米管层中的碳纳米管在垂直于表面的方向上至少部分地排列 的金属基层。

公开(公告)号：US20130176661A1

公开(公告)日：2013-07-11

申请号：US13825987

申请日：2010-09-28

申请人： Markku Rouvala ,  Yinglin Liu ,  Piers Andrew ,  Pritesh Hiralal ,  Haolan Wang ,  Gehan Amaratunga

发明人： Markku Rouvala ,  Yinglin Liu ,  Piers Andrew ,  Pritesh Hiralal ,  Haolan Wang ,  Gehan Amaratunga

IPC分类号： H01G11/00 ,  H01G9/00

CPC分类号： H01G11/00 ,  H01G9/0029 ,  H01G11/22 ,  H01G11/24 ,  H01G11/26 ,  H01G11/32 ,  H01G11/52 ,  H01G11/54 ,  H01G11/84 ,  H05K1/147 ,  H05K1/162 ,  H05K1/189 ,  Y02E60/13 ,  Y10T156/10

摘要： An apparatus, the apparatus including first and second circuit boards, and an electrolyte, the first and second circuit boards each including a capacitive element, wherein the apparatus is configured such that a chamber is defined between the first and second circuit boards with the capacitive elements contained therein and facing one another, the chamber including the electrolyte, and wherein the apparatus is configured to store electrical charge when a potential difference is applied between the capacitive elements.

摘要翻译： 一种装置，包括第一和第二电路板以及电解质的装置，所述第一和第二电路板各自包括电容元件，其中所述装置被配置为使得在所述第一和第二电路板之间限定有电容元件 其中容纳在其中并且彼此面对，所述室包括电解质，并且其中所述装置被配置为当在所述电容元件之间施加电位差时存储电荷。

公开(公告)号：US20060049406A1

公开(公告)日：2006-03-09

申请号：US10936721

申请日：2004-09-09

申请人： Gehan Amaratunga ,  Florin Udrea

发明人： Gehan Amaratunga ,  Florin Udrea

IPC分类号： H01L29/76

CPC分类号： H01L29/7824 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/41725 ,  H01L29/4175 ,  H01L29/42368 ,  H01L29/78603 ,  H01L29/78624

摘要： This invention is generally concerned with power semiconductors such as power MOS transistors, insulated gate by bipolar transistors (IGBTs), high voltage diodes and the like, and methods for their fabrication. A power semiconductor, the semiconductor comprising: a power device, said power device having first and second electrical contact regions and a drift region extending therebetween; and a semiconductor substrate mounting said device; and wherein said power semiconductor includes an electrically insulating layer between said semiconductor substrate and said power device, said electrically insulating layer having a thickness of at least 5 μm.

公开(公告)号：US20050242369A1

公开(公告)日：2005-11-03

申请号：US11174606

申请日：2005-07-06

申请人： Florin Udrea ,  Gehan Amaratunga

发明人： Florin Udrea ,  Gehan Amaratunga

IPC分类号： H01L21/329 ,  H01L21/331 ,  H01L21/336 ,  H01L21/76 ,  H01L21/762 ,  H01L21/764 ,  H01L21/8234 ,  H01L27/08 ,  H01L27/088 ,  H01L29/06 ,  H01L29/08 ,  H01L29/12 ,  H01L29/20 ,  H01L29/24 ,  H01L29/32 ,  H01L29/423 ,  H01L29/739 ,  H01L29/78 ,  H01L29/786 ,  H01L29/861

CPC分类号： H01L29/7816 ,  H01L21/76289 ,  H01L21/764 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0657 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/083 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/42368 ,  H01L29/66325 ,  H01L29/66333 ,  H01L29/66348 ,  H01L29/7393 ,  H01L29/7394 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7801 ,  H01L29/7802 ,  H01L29/7812 ,  H01L29/7813 ,  H01L29/7824 ,  H01L29/7831 ,  H01L2924/0002 ,  H01L2924/00

摘要： A power semiconductor device has an active region that includes a drift region. At least a portion of the drift region is provided in a membrane which has opposed top and bottom surfaces. In one embodiment, the top surface of the membrane has electrical terminals connected directly or indirectly thereto to allow a voltage to be applied laterally across the drift region. In another embodiment, at least one electrical terminal is connected directly or indirectly to the top surface and at least one electrical terminal is connected directly or indirectly to the bottom surface to allow a voltage to be applied vertically across the drift region. In each of these embodiments, the bottom surface of the membrane does not have a semiconductor substrate positioned adjacent thereto.

公开(公告)号：US20050242368A1

公开(公告)日：2005-11-03

申请号：US11174605

申请日：2005-07-06

申请人： Florin Udrea ,  Gehan Amaratunga

发明人： Florin Udrea ,  Gehan Amaratunga

IPC分类号： H01L21/329 ,  H01L21/331 ,  H01L21/336 ,  H01L21/76 ,  H01L21/762 ,  H01L21/764 ,  H01L21/8234 ,  H01L27/08 ,  H01L27/088 ,  H01L29/06 ,  H01L29/08 ,  H01L29/12 ,  H01L29/20 ,  H01L29/24 ,  H01L29/32 ,  H01L29/423 ,  H01L29/739 ,  H01L29/78 ,  H01L29/786 ,  H01L29/861

CPC分类号： H01L29/7816 ,  H01L21/76289 ,  H01L21/764 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0657 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/083 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/42368 ,  H01L29/66325 ,  H01L29/66333 ,  H01L29/66348 ,  H01L29/7393 ,  H01L29/7394 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7801 ,  H01L29/7802 ,  H01L29/7812 ,  H01L29/7813 ,  H01L29/7824 ,  H01L29/7831 ,  H01L2924/0002 ,  H01L2924/00

摘要： A power semiconductor device has an active region that includes a drift region. At least a portion of the drift region is provided in a membrane which has opposed top and bottom surfaces. In one embodiment, the top surface of the membrane has electrical terminals connected directly or indirectly thereto to allow a voltage to be applied laterally across the drift region. In another embodiment, at least one electrical terminal is connected directly or indirectly to the top surface and at least one electrical terminal is connected directly or indirectly to the bottom surface to allow a voltage to be applied vertically across the drift region. In each of these embodiments, the bottom surface of the membrane does not have a semiconductor substrate positioned adjacent thereto.

公开(公告)号：US20050172370A1

公开(公告)日：2005-08-04

申请号：US10517257

申请日：2004-11-04

申请人： Sajad Haq ,  Ioannis Alexandrou ,  Gehan Amaratunga ,  Khai Ang

发明人： Sajad Haq ,  Ioannis Alexandrou ,  Gehan Amaratunga ,  Khai Ang

IPC分类号： C01B31/02 ,  C01B31/30 ,  C04B35/622 ,  C25D1/04

CPC分类号： C04B35/62277 ,  B82Y30/00 ,  C01B32/914 ,  C04B35/62227 ,  C04B2235/405 ,  C04B2235/5264 ,  C04B2235/5284

摘要： A method of forming a nanowire comprising: providing nanoparticles of a metallic material; providing a vapour of fluorocarbon molecules by heating a solid polymer; depositing at least some of the carbon of said molecules onto an exterior of one of said particles to form a deposit of carbon which surrounds at least part of the exterior of said one particle and assembling further of said particles with said one particle to form an elongate configuration of material in the form of a nanowire. Similar methods of production of nanotubes are also disclosed.

摘要翻译： 一种形成纳米线的方法，包括：提供金属材料的纳米颗粒; 通过加热固体聚合物提供氟碳分子的蒸气; 将所述分子的至少一些碳沉积到所述颗粒之一的外部上以形成碳沉积物，所述沉积物围绕所述一个颗粒的外部的至少一部分并且与所述一个颗粒进一步组装所述颗粒以形成细长的 配置纳米线形式的材料。 还公开了类似的纳米管生产方法。

公开(公告)号：US08696784B2

公开(公告)日：2014-04-15

申请号：US13707985

申请日：2012-12-07

申请人： Nilwala Kottegoda ,  Gayan Priyadharshana ,  Chanaka Sandaruwan ,  Damayanthi Dahanayake ,  Sunanda Gunasekara ,  A. J. Gehan Amaratunga ,  Veranja Karunaratne

发明人： Nilwala Kottegoda ,  Gayan Priyadharshana ,  Chanaka Sandaruwan ,  Damayanthi Dahanayake ,  Sunanda Gunasekara ,  A. J. Gehan Amaratunga ,  Veranja Karunaratne

IPC分类号： C05C9/00 ,  C05C11/00

CPC分类号： C05B17/00 ,  C05B3/00 ,  C05C9/005 ,  C05D9/00 ,  C05G3/0041 ,  C05G3/0047 ,  C05G3/0052 ,  C05C9/00

摘要： A fertilizer composition wherein a nitrogen containing macronutrient is adsorbed on the surface of hydroxyapatite phosphate nanoparticles. Said fertilizer composition slowly releases the nitrogen containing macronutrient to soil.

摘要翻译： 一种肥料组合物，其中含氮的大量营养素被吸附在羟基磷灰石磷酸盐纳米颗粒的表面上。 所述肥料组合物缓慢释放含氮大量营养素的土壤。

公开(公告)号：US08320598B2

公开(公告)日：2012-11-27

申请号：US12605644

申请日：2009-10-26

申请人： Markku Rouvala ,  Tim Mellow ,  Pritesh Hiralal ,  Haolan Wang ,  Gehan Amaratunga

发明人： Markku Rouvala ,  Tim Mellow ,  Pritesh Hiralal ,  Haolan Wang ,  Gehan Amaratunga

IPC分类号： H04R25/00

CPC分类号： H04R1/22 ,  H04R1/2803 ,  H04R1/288 ,  H04R9/06

摘要： An apparatus and method of providing an apparatus, the apparatus including: a loudspeaker configured to convert an electrical input signal into an acoustic output signal; and carbon nanohorn material wherein the carbon nanohorn material is positioned so as to be exposed to the acoustic output signal.

摘要翻译： 一种提供装置的装置和方法，所述装置包括：扬声器，被配置为将电输入信号转换成声输出信号; 和碳纳米角材料，其中碳纳米角材料被定位成暴露于声输出信号。

公开(公告)号：US20100178531A1

公开(公告)日：2010-07-15

申请号：US12319968

申请日：2009-01-13

申请人： Gehan Amaratunga ,  Haolan Wang ,  Husnu Emrah Unalan ,  Markku Antti Kyosti Rouvala ,  Di Wei

发明人： Gehan Amaratunga ,  Haolan Wang ,  Husnu Emrah Unalan ,  Markku Antti Kyosti Rouvala ,  Di Wei

IPC分类号： H01M12/00

CPC分类号： H01M12/005 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  H01G11/26 ,  H01G11/36 ,  H01G11/62 ,  H01G11/86 ,  H01M2/1653 ,  H01M4/0404 ,  H01M4/133 ,  H01M4/1393 ,  H01M4/661 ,  H01M4/663 ,  H01M4/8842 ,  H01M10/0525 ,  Y02E60/13 ,  Y02P70/54

摘要： An energy storage device structure comprises a first electrode layer, an electrolyte layer and a second electrode layer. At least one of the electrode layers comprise a metallic base layer, a layer of carbon nanotubes grown on the base layer and a layer of carbon nanoparticles disposed on the carbon nanotube layer, the carbon nanoparticle layer being arranged to face the electrolyte layer. The structure has much larger width and length than thickness, so it is rolled up or folded and then hermetically sealed to form an energy storage unit. The layer of carbon nanotubes is grown on the metallic base layer by a chemical vapor deposition process at a temperature no higher than 550° C. The carbon nanotubes in the carbon nanotube layer are at least partially aligned in a direction that is perpendicular to the surface of the metallic base layer.

摘要翻译： 储能装置结构包括第一电极层，电解质层和第二电极层。 至少一个电极层包括金属基底层，在基底层上生长的碳纳米管层和设置在碳纳米管层上的碳纳米管层，碳纳米颗粒层被布置为面向电解质层。 该结构具有比厚度大得多的宽度和长度，因此它被卷起或折叠，然后气密密封以形成储能单元。 碳纳米管层通过化学气相沉积工艺在不高于550℃的温度下在金属基底层上生长。碳纳米管层中的碳纳米管在垂直于表面的方向上至少部分地排列 的金属基层。

公开(公告)号：US07551460B2

公开(公告)日：2009-06-23

申请号：US11445476

申请日：2006-06-01

申请人： Vinod A. Lalithambika ,  Devarahandi Indika Mahaesh de Silva ,  Jayaraman Kumar ,  Gehan Amaratunga

发明人： Vinod A. Lalithambika ,  Devarahandi Indika Mahaesh de Silva ,  Jayaraman Kumar ,  Gehan Amaratunga

IPC分类号： H02M3/335

CPC分类号： H02M3/33523

摘要： This invention relates to switch mode power supply (SMPS) controllers employing primary side sensing. We describe an (SMPS) controller which uses an area correlator to compare an area under a feedback signal waveform between a start point defined by said first timing signal and an end point defined by said second timing signal with a reference area. An output of the area correlator provides an error signal for regulating the SMPS output.

摘要翻译： 本发明涉及采用初级侧感测的开关电源（SMPS）控制器。 我们描述一种（SMPS）控制器，其使用区域相关器来比较由所述第一定时信号定义的起始点和由所述第二定时信号定义的终点与参考区域之间的反馈信号波形下的区域。 区域相关器的输出提供用于调节SMPS输出的误差信号。