发明申请
US20050245409A1 Reducing oxide loss when using fluoride chemistries to remove post-etch residues in semiconductor processing
失效
当使用氟化物化学物质去除半导体加工中的蚀刻后残留物时，减少氧化物损失
- 专利标题： Reducing oxide loss when using fluoride chemistries to remove post-etch residues in semiconductor processing
- 专利标题（中）： 当使用氟化物化学物质去除半导体加工中的蚀刻后残留物时，减少氧化物损失
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申请号： US10836259申请日： 2004-05-03
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公开(公告)号： US20050245409A1公开(公告)日： 2005-11-03
- 发明人: Mihaela Cernat , Shihying Lee
- 申请人： Mihaela Cernat , Shihying Lee
- 主分类号： C11D1/00
- IPC分类号： C11D1/00 ; C11D7/08 ; C11D7/32 ; C11D7/50 ; C11D11/00 ; C23F11/14 ; C23F11/167 ; C23F11/173 ; C23G1/06 ; H01L21/02 ; H01L21/306 ; H01L21/311
摘要：
A novel cleaning composition used for post-etch resist residue removal is disclosed. In contrast to the conventional cleaning solutions based on fluoride chemistries, the present invention can significantly reduce the oxide loss resulting from the exfoliation, while still providing an excellent cleaning efficiency.
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