发明申请
- 专利标题： Stacked dielectric layer suppressing electrostatic charge buildup and method of fabricating the same
- 专利标题（中）： 叠层介电层抑制静电电荷的形成及其制造方法
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申请号： US10842971申请日： 2004-05-11
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公开(公告)号： US20050255704A1公开(公告)日： 2005-11-17
- 发明人: Chai-Tak Teh , Min-Nin Yu , Gary Yang , Han-Chung Chen , Yuan-Shin Jing , Jian-Liang Lin , Jui-Feng Jao
- 申请人： Chai-Tak Teh , Min-Nin Yu , Gary Yang , Han-Chung Chen , Yuan-Shin Jing , Jian-Liang Lin , Jui-Feng Jao
- 主分类号： H01L21/316
- IPC分类号： H01L21/316 ; H01L21/4763 ; H01L21/768
摘要：
A method of fabricating a stacked dielectric layer for suppressing electrostatic charge buildup. First, a substrate having metal layers thereon is provided, with a plurality of gaps formed therebetween. Next, a dielectric layer is formed by simultaneous deposition and ion-bombardment, such that the dielectric layer covers the bottom dielectric liner and fills the gaps. Finally, a top dielectric liner is formed on the dielectric layer by deposition without ion-bombardment. Furthermore, the present invention provides another method to fabricate a stacked dielectric layer by performing a plasma treatment on the dielectric layer to suppress electrostatic charge buildup. As a result, the above-mentioned methods can efficiently avoid metal extrusion issues.
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