Fabrication of stacked dielectric layer for suppressing electrostatic charge buildup
    2.
    发明授权
    Fabrication of stacked dielectric layer for suppressing electrostatic charge buildup 有权
    用于抑制静电电荷积累的叠层电介质层的制造

    公开(公告)号:US07205209B2

    公开(公告)日:2007-04-17

    申请号:US10842971

    申请日:2004-05-11

    IPC分类号: H01L21/331

    摘要: A method of fabricating a stacked dielectric layer for suppressing electrostatic charge buildup. First, a substrate having metal layers thereon is provided, with a plurality of gaps formed therebetween. Next, a dielectric layer is formed by simultaneous deposition and ion-bombardment, such that the dielectric layer covers the bottom dielectric liner and fills the gaps. Finally, a top dielectric liner is formed on the dielectric layer by deposition without ion-bombardment. Furthermore, the present invention provides another method to fabricate a stacked dielectric layer by performing a plasma treatment on the dielectric layer to suppress electrostatic charge buildup. As a result, the above-mentioned methods can efficiently avoid metal extrusion issues.

    摘要翻译: 一种制造用于抑制静电电荷累积的叠层电介质层的方法。 首先,提供其上具有金属层的基板,其间形成有多个间隙。 接下来,通过同时沉积和离子轰击形成电介质层,使得电介质层覆盖底部电介质衬垫并填充间隙。 最后,通过在没有离子轰击的情况下进行沉积,在电介质层上形成顶部绝缘衬垫。 此外,本发明提供了通过在电介质层上进行等离子体处理以抑制静电电荷累积来制造叠层电介质层的另一种方法。 结果,上述方法可以有效地避免金属挤压问题。