发明申请
US20050260354A1 In-situ process chamber preparation methods for plasma ion implantation systems
审中-公开
等离子体离子注入系统的原位处理室制备方法
- 专利标题： In-situ process chamber preparation methods for plasma ion implantation systems
- 专利标题（中）： 等离子体离子注入系统的原位处理室制备方法
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申请号： US10850222申请日： 2004-05-20
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公开(公告)号： US20050260354A1公开(公告)日： 2005-11-24
- 发明人: Vikram Singh , Atul Gupta , Harold Persing , Steven Walther , Anne Testoni
- 申请人： Vikram Singh , Atul Gupta , Harold Persing , Steven Walther , Anne Testoni
- 申请人地址： US MA Gloucester
- 专利权人： Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人： Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人地址： US MA Gloucester
- 主分类号： H01J37/32
- IPC分类号： H01J37/32 ; C23C14/00 ; C23C16/00
摘要：
A method for plasma ion implantation of a substrate includes providing a plasma ion implantation system including a process chamber, a source for producing a plasma in the process chamber, a platen for holding the substrate in the process chamber, and a voltage source for accelerating ions from the plasma into the substrate, depositing on interior surfaces of the process chamber a fresh coating that is similar in composition to a deposited film that results from plasma ion implantation of the substrate, before depositing the fresh coating, cleaning interior surfaces of the process chamber by removing an old film using one or more activated cleaning precursors, plasma ion implantation of the substrate according to a plasma ion implantation process, and repeating the steps of cleaning interior surfaces of the process chamber and depositing a fresh coating following plasma ion implantation of one or more substrates.
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