发明申请
- 专利标题： Stabilization of high-k dielectric materials
- 专利标题（中）： 高k电介质材料的稳定化
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申请号： US10851514申请日： 2004-05-21
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公开(公告)号： US20050260357A1公开(公告)日： 2005-11-24
- 发明人: Christopher Olsen , Pravin Narwankar , Shreyas Kher , Randhir Thakur , Shankar Muthukrishnan , Philip Kraus
- 申请人： Christopher Olsen , Pravin Narwankar , Shreyas Kher , Randhir Thakur , Shankar Muthukrishnan , Philip Kraus
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 主分类号： C23C16/40
- IPC分类号： C23C16/40 ; C23C16/455 ; C23C16/56 ; H01L21/28 ; H01L21/314 ; H01L21/316 ; B05D7/00
摘要：
In one embodiment, a method for forming a dielectric stack on a substrate is provided which includes depositing a first layer of a dielectric material on a substrate surface, exposing the first layer to a nitridation process, depositing a second layer of the dielectric material on the first layer, exposing the second layer to the nitridation process, and exposing the substrate to an anneal process. In another embodiment, a method for forming a dielectric material on a substrate is provided which includes depositing a metal oxide layer substantially free of silicon on a substrate surface, exposing the metal oxide layer to a nitridation process, and exposing the substrate to an anneal process.
公开/授权文献
- US08323754B2 Stabilization of high-k dielectric materials 公开/授权日：2012-12-04
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