发明申请
- 专利标题： Preparation of photomask blank and photomask
- 专利标题（中）： 光掩模坯料和光掩模的制备
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申请号： US11130278申请日： 2005-05-17
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公开(公告)号： US20050260505A1公开(公告)日： 2005-11-24
- 发明人: Noriyasu Fukushima , Hiroki Yoshikawa , Hideo Kaneko
- 申请人： Noriyasu Fukushima , Hiroki Yoshikawa , Hideo Kaneko
- 专利权人： Shin-Etsu Chemical Co., Ltd.
- 当前专利权人： Shin-Etsu Chemical Co., Ltd.
- 优先权： JP2004-147403 20040518
- 主分类号： C23C14/00
- IPC分类号： C23C14/00 ; C23C14/06 ; C25B9/00 ; C25B11/00 ; C25B13/00 ; G03C5/00 ; G03F1/32 ; G03F1/54 ; G03F1/68 ; G03F9/00 ; H01L21/027
摘要：
A photomask blank is prepared by forming a light-absorbing film on a transparent substrate, and irradiating the light-absorbing film with light from a flash lamp at an energy density of 3 to 40 J/cm2. A photomask is prepared by forming a resist pattern on the photomask blank by photolithography, etching away those portions of the light-absorbing film which are not covered with the resist pattern, and removing the resist.
公开/授权文献
- US07514185B2 Preparation of photomask blank and photomask 公开/授权日：2009-04-07
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