发明申请
- 专利标题： Method of passivating chemical mechanical polishing compositions for copper film planarization processes
- 专利标题（中）： 钝化铜膜平面化工艺的化学机械抛光组合物的方法
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申请号： US11117282申请日： 2005-04-28
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公开(公告)号： US20050263490A1公开(公告)日： 2005-12-01
- 发明人: Jun Liu , Mackenzie King , Michael Darsillo , Karl Boggs , Jeffrey Roeder , Thomas Baum
- 申请人： Jun Liu , Mackenzie King , Michael Darsillo , Karl Boggs , Jeffrey Roeder , Thomas Baum
- 主分类号： C09G1/02
- IPC分类号： C09G1/02 ; C23F3/00 ; C23F3/06 ; C23F11/14 ; H01L21/321 ; B24D3/02 ; B44C1/22 ; C09C1/68
摘要：
A method of passivating a CMP composition by dilution and determining the relationship between the extent of dilution and the static etch rate of copper. Such relationship may be used to control the CMP composition during the CMP polish to minimize the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions in the CMP composition and at the copper/CMP composition interface.
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